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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFETs
Brand:Wolfspeed
Particular Year:24+
Package:TOLL
Delivery Date:New and Original
Stock: 12500pcs
The C3M0045065L SiC MOSFET C3M™ (in TOLL package) has a much lower on-resistance temperature dependence than standard silicon MOSFETs. This MOSFET device has excellent switching speed and low on-state losses, which are critical for achieving high efficiency at high power for next-generation power supplies.
Features
- Third-generation SiC MOSFET technology
- Optimised package with separate drive source pins
- High blocking voltage, low on-resistance
- High speed switching, low capacitance
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen-free, RoHS compliant
Specification
Manufacturer: Wolfspeed, Inc.
Series: C3M™
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 650 V
Current at 25°C - Continuous Drain (Id): 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
On-resistance (max) at different Id, Vgs: 60 mOhm @ 17.6A, 15V
Vgs(th) at different Id (max) 3.6V @ 4.84mA
Gate Charge (Qg) at Vgs (max): 59 nC @ 15 V
Vgs (max): +19V, -8V
Input capacitance (Ciss) at varying Vds (max): 1621 pF @ 400 V
Power Dissipation (Max): 164W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Applications
- Data centre power supplies
- Telecom power supplies
- Energy storage systems
- Solar (photovoltaic) inverters
- High voltage DC/DC converters
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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