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The C3M0045065L SiC MOSFET C3M™ (in TOLL package) has a much lower on-resistance temperature dependence than standard silicon MOSFETs. This MOSFET device has excellent switching speed and low on-state losses, which are critical for achieving high efficiency at high power for next-generation power supplies.

Features

- Third-generation SiC MOSFET technology

- Optimised package with separate drive source pins

- High blocking voltage, low on-resistance

- High speed switching, low capacitance

- Fast intrinsic diode with low reverse recovery (Qrr)

- Halogen-free, RoHS compliant

Specification

Manufacturer: Wolfspeed, Inc.  

Series: C3M™  

FET Type: N-Channel  

Technology: SiCFET (Silicon Carbide)  

Drain-Source Voltage (Vdss): 650 V  

Current at 25°C - Continuous Drain (Id): 49A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 15V  

On-resistance (max) at different Id, Vgs: 60 mOhm @ 17.6A, 15V  

Vgs(th) at different Id (max) 3.6V @ 4.84mA  

Gate Charge (Qg) at Vgs (max): 59 nC @ 15 V  

Vgs (max): +19V, -8V  

Input capacitance (Ciss) at varying Vds (max): 1621 pF @ 400 V  

Power Dissipation (Max): 164W (Tc)  

Operating Temperature: -40°C ~ 175°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: TOLL  

Applications

- Data centre power supplies

- Telecom power supplies

- Energy storage systems

- Solar (photovoltaic) inverters

- High voltage DC/DC converters

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