sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MSCSM120HM083AG
Brand:Microchip
Particular Year:24+
Package:Module
Delivery Date:New and Orignal
Stock: 1000pcs
The MSCSM120HM083AG features SiC power MOSFETs with low RDS (conduction), high temperature performance, Kelvin source, and easy drive. Low stray inductance, high efficiency converter, excellent performance at high frequency operation, stable temperature characteristics. Direct mount to heat sink (isolated package), low case thermal resistance, RoHS compliant.
Product Characteristics
Technology: Silicon Carbide (SiC)
Configuration: 4 N-Channel (Full Bridge)
Drain-to-source voltage (Vdss): 1200 V (1.2 kV)
Current at 25°C - Continuous Drain (Id): 251A (Tc).
Switching Resistance at Various Id, Vgs (Max): 10.4 mOhm @ 120A, 20V
Vgs(th) at various transient voltages (max): 2.8V @ 9mA
Gate charge (Qg) at Vgs max: 696nC @ 20V
Input Capacitance (Ciss) at Vds (max): 9000pF @ 1000V 9000pF @ 1000V
Power - Max: 1.042kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Packaging/Enclosure: Module
Applications
●Welding converters
●Switching mode power supplies
●Uninterruptible power supplies
●Electric vehicle motors and traction drives
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