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Trade Name:DRV8300UDIPWR
Data Manual:DRV8300UDIPWR.pdf
Brand:TI
Particular Year:23+
Package:20-TSSOP
Delivery Date:New original
Stock: 3000pcs
The DRV8300UDIPWR is a 100V three-phase half-bridge gate driver capable of driving both high - and low-side N-channel power MOSFETs. The DRV8300UD uses an integrated bootstrap diode and external capacitors to generate the appropriate gate drive voltage for the high-side MOSFETs. GVDD is used to generate the gate drive voltage for the low-side MOSFETs. The grid drive architecture supports peak pull currents up to 750mA and fill currents up to 1.5A.
Product Attributes:
Drive configuration: high voltage side and low voltage side
Channel type: 3 phases
Number of drives: 2
Gate type: N channel MOSFET
Voltage - Power supply: 8.7V ~ 20V
Logic voltage - VIL, VIH: 0.8V, 2V
Current - Peak output (input, pull out) : 750mA, 1.5A
Input type: inverting, non-inverting
High voltage side voltage - Max (bootstrap) : 125 V
Rise/fall time (typical value) : 24ns, 12ns
Operating temperature: -40°C ~ 125°C (TA)
Mounting type: Surface mount type
Package/housing: 20-TSSOP (0.173", 4.40mm wide)
Supplier device package: 20-TSSOP
Basic product number: DRV8300
Model
Brand
Package
Quantity
Describe
INFINEON
DSO-16
2000
1200V single high-side gate driver IC with active Miller clamp, DESAT and short circuit clamping
INFINEON
DSO-24
2000
Three phase gate driver IC bare die with integrated bootstrap diode and over current protection
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Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …
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