sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:CMPA2560025D
Data Manual:CMPA2560025D.pdf
Brand:MACOM
Particular Year:23+
Package:Mold
Delivery Date:New original
Stock: 1000pcs
CMPA2560025D is a monolithic microwave integrated circuit (MMIC) based on gallium nitride (GaN) high electron mobility transistor (HEMT). Compared to silicon or gallium arsenide, GaN has excellent properties, including higher breakdown voltage, higher saturated electron drift speed, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidth than Si and GaAs transistors. The MMIC includes a two-stage reactance matching amplifier design method that enables very wide bandwidths.
Product attribute
Frequency: 2.5GHz ~ 6GHz
P1dB: -
Gain: 23.1dB
Noise figure: -
Rf Type: Common
Voltage - Power supply: 28V
Current - Power supply: -
Test frequency: 6GHz
Mounting type: Surface mount type
Package/shell: Mold
Supplier device package: mold
Model
Brand
Package
Quantity
Describe
INFINEON
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Headquartered in Lowell, Massachusetts, MACOM has design centers and sales offices in North America, Europe and Asia.MACOM is certified to ISO9001 international quality standard and ISO14001 environmental management standard.MACOM has over 65 years of…
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