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The UF3SC120009K4S silicon carbide field effect transistor device features a unique "cascade" circuit configuration. The device features a unique "cascade" circuit configuration in which a normally-open SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The standard gate drive characteristics of this device make it a true "direct replacement" for Si IGBTs. Available in a TO-247-4L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring a standard gate drive.

Product Attributes

FET Type: N-Channel

Technology: SiCFET (Common Source Common Gate SiCJFET)

Drain-Source Voltage (Vdss): 1200 V

Current at 25°C - Continuous Drain (Id): 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 12V

On Resistance (Max) at Different Id, Vgs: 11 mOhm @ 100A, 12V

Vgs(th) at different Id (max): 6V @ 10mA

Gate Charge (Qg) (max) at varying Vgs: 234 nC @ 15 V

Vgs (max): ±20V

Input capacitance (Ciss) at varying Vds (max): 8512 pF @ 100 V

Power Dissipation (Max): 789W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Through Hole

Supplier Device Package: TO-247-4

Package/Housing: TO-247-4

Applications

● EV charging

● Photovoltaic inverters

● Switching power supplies

● Power factor correction modules

● Motor drives

● Induction heating

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