sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:UF4SC120023K4S
Data Manual:UF4SC120023K4S.pdf
Brand:Qorvo
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
The UF4SC120023K4S is a 1200V, 23mW G4 SiC FET.It uses a unique "cascade" circuit configuration. Co-packaged with a Si MOSFET, it results in a normally-off SiC FET device. The device's standard gate drive characteristics allow for a true "plug and play replacement" for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in a TO-247-4L package, the device features ultra-low gate charge and ultra-high stability. With ultra-low gate charge and excellent reverse recovery characteristics, it is ideal for switching devices.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Common Source Common Gate SiCJFET)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
On Resistance (Max) at Different Id, Vgs: 29 milliohms @ 40A, 12V
Vgs(th) at different Id (max): 6V @ 10mA
Gate Charge (Qg) (max) at varying Vgs: 37.8 nC @ 15 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 1430 pF @ 800 V
Power Dissipation (Max): 385W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package/Housing: TO-247-4
Applications
● In-vehicle charging
● Industrial battery chargers
● PFC in solar energy
● Industrial power supplies
● Welding machines
● Uninterruptible power supply (UPS)
● Induction heating
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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