sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:HMC637ALP5ETR
Data Manual:HMC637ALP5ETR.pdf
Brand:ADI
Particular Year:23+
Package:QFN-32
Delivery Date:New and Original
Stock: 2000pcs
The HMC637ALP5ETR is a gallium arsenide (GaAs), single-chip microwave integrated circuit (MMIC), pseudo-crystalline high electron mobility transistor (pHEMT) distributed power amplifier that operates over the frequency range of 0.1 GHz to 6 GHz.The amplifier delivers 13 dB of gain, a 44 dBm output third-order cross-modulation intercept (IP3), and 29 dBm of output power ( The HMC637ALP5E has a gain flatness of ±0.75 dB over the 100 MHz to 6 GHz range, making it ideally suited for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC637ALP5E amplifier RF I/O is internally matched to 50 Ω, and the 5 mm × 5 mm leadframe chip-scale package (LFCSP) is compatible with large-scale surface-mount technology (SMT) assembly equipment.
Features
P1dB output power: 29 dBm
Gain: 13 dB
Output IP3: 44 dBm
50 Ω matched input/output
32-pin, 5 mm × 5 mm LFCSP package: 25 mm2
Extended industrial temperature range: -55°C to +105°C
Applications
Telecom infrastructure
Microwave radio
Very Small Aperture Terminal (VSAT)
Military and space
Test Instrumentation
Fibre Optic Products
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