sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RJP65T54DPM-A0
Data Manual:RJP65T54DPM-A0.pdf
Brand:Renesas
Particular Year:23+
Package:TO-3PFP
Delivery Date:New and Original
Stock: 1000pcs
The RJP65T54DPM-A0 features low collector-to-emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C), isolated package with trench gate and thin wafer technology (G7H series), high-speed switching, operating frequency (50 Hz ≤ f ˂ 20 kHz), and no guaranteed short-circuit withstand time.
Product Attributes
IGBT Type: Trench
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 60 A
Vce(on) (max) at varying Vge, Ic: 1.68V @ 15V, 30A
Power - Max: 63.5 W
Switching Energy: 330µJ (on), 760µJ (off)
Input Type: Standard
Gate Charge: 72 nC
Td (on/off) value at 25°C: 35ns/120ns
Test Conditions: 400V, 30A, 10 Ohm, 15V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: SC-94
Supplier Device Package: TO-3PFP
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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