sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FCH190N65F-F155
Data Manual:FCH190N65F-F155.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The FCH190N65F-F155 is ON Semiconductor's new family of high voltage Super Junction (SJ) MOSFETs. Balanced technology with excellent low on-resistance and lower gate charge performance. This technology minimises conduction losses and provides excellent switching performance, dv/dt rates and higher avalanche energy. As a result, the devices are ideally suited for switching power applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power applications.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 В
Current at 25°C - Continuous Drain (Id): 20.6 A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 10 Ω: 10 В
Switching Resistance at Different Id, Vgs (Max): 190 mOhm at 10 A, 10 V
Vgs(th) at different Id (max): 5V @ 2mA
Gate charge (Qg) at different Vgs (max): 78 nK at 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max) 3225 pF @ 100 V
Power Dissipation (Max): 208 W (Tc): 208 W (Tc).
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting type: Through-hole
Scope of delivery: TO-247-3
Packaging / Case: TO-247-3
Applications
● LCD / LED / PDP TVs
● Solar inverters
● Power supplies for telecom and servers
● AC-DC power supplies
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