sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NVBG040N120SC1
Data Manual:NVBG040N120SC1.pdf
Brand:ON
Particular Year:23+
Package:TO-263-8
Delivery Date:New and Original
Stock: 1000pcs
The NVBG040N120SC1 MOSFETs feature a new technology that provides superior switching performance and higher reliability than silicon devices. These MOSFETs have low on-resistance to ensure low capacitance and low gate charge. 1200V EliteSiC MOSFETs enable system benefits including increased efficiency, faster operating frequency, higher power density, reduced EMI, and reduced system size.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: SiCFET (Silicon Carbide)
Drain-to-source voltage (Vdss): 1200 В
Current at 25°C - Continuous Drain (Id): 60A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 20 Ω: 20 В
Switching Resistance (Max) at Different Id, Vgs: 56 mOhm @ 35A, 20V
Vgs(th) at different Id (max): 4, 3V @ 10mA
Gate charge (Qg) at different Vgs (max): 106 nK @ 20V
Vgs (max): +25V, -15V
Input capacitance (Ciss) at different Vds (max): 1789 pF @ 800 V
Power Dissipation (Max): 357 W (Tc): 357 W (Tc).
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Certification: AEC-Q101
Mounting Type: Surface Mount
Delivery includes: D2PAK-7
Package/case: TO-263-8, D²Pak (7-pin + cladding), TO-263CA
Applications
● Automotive on-board chargers
● Automotive DC/DC converters for electric/hybrid vehicles
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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