sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:ADPA7005AEHZ
Data Manual:ADPA7005AEHZ.pdf
Brand:ADI
Particular Year:23+
Package:LCC-18
Delivery Date:New and Original
Stock: 2000pcs
The ADPA7005AEHZ is a gallium arsenide (GaAs), pseudocrystalline high electron mobility (pHEMT), single-chip microwave integrated circuit (MMIC), 32 dBm saturated power at saturation (PSAT) (>1 W) power amplifier with an integrated temperature-compensated on-chip power detector, and operates over the frequency range of 18 GHz to 44 GHz.The ADPA7005AEHZ delivers 15.5 dB of small-signal gain and approximately 32 dBm PSAT at 32 GHz from a 5 V power supply (see Figure 26 in the datasheet).The ADPA7005AEHZ has an output IP3 of 40 dBm from 24 GHz to 34 GHz, making it ideally suited for linear applications such as electronic countermeasures and instrumentation applications that require >30 dBm of effective PSAT. The RF inputs and outputs are internally matched and straightened for easy integration into higher level assemblies.The ADPA7005AEHZZ is available in a 7 mm × 7 mm, 18-pin ceramic lead-free chip carrier package with heat sink (LCC_HS), which offers low thermal resistance and is compatible with surface mount manufacturing technology.
Product Features
Output P1dB: Up to 31 dBm (typical)
PSAT: up to 32 dBm (typical)
Gain: up to 15.5 dB (typical)
Output IP3: up to 42.5 dBm (typical)
Supply voltage: 5 V (1400 mA)
50 Ω matched input/output
18-pin, 7 mm × 7 mm LCC_HS package
Integrated power detectors
Typical Applications
Military and space
Test Instrumentation
Communications
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