sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:ADPA7006AEHZ
Data Manual:ADPA7006AEHZ.pdf
Brand:ADI
Particular Year:23+
Package:LCC-16
Delivery Date:New and Original
Stock: 2000pcs
The ADPA7006AEHZ GaAs pHEMT MMIC power amplifier is a pseudo-crystalline high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) distributed power amplifier that operates over the frequency range of 18 GHz to 44 GHz. The power amplifier features 23.5 dB of small-signal gain, 29 dBm of output power (1 dB compressed), and a 38 dBm typical output third-order crossmodulation cutoff. The ADPA7006AEHZZ requires a 5V supply voltage (VDD) with 800mA of current, and the inputs and outputs are internally matched to 50Ω for easy integration into multi-chip modules (MCMs).
Features
Output P1dB: 29dBm
PSAT: 29.5dBm
23.5dB gain
Output IP3: 38dBm
Supply Voltage: 5V (800m)
Integrated power detector
50Ω matched input/output
Die size: 2.750mm × 1.805mm × 0.102mm
Applications
Military and space
Test instrumentation
Communication
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