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Trade Name:MSCSM120TLM31C3AG
Data Manual:MSCSM120TLM31C3AG.pdf
Brand:Microchip
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
The MSCSM120TLM31C3AG are SiC Schottky diodes (CR1 and CR2) featuring SiC power MOSFETs, low RDS (conduction), high temperature performance, zero reverse recovery and zero forward recovery, temperature independent switching behaviour, VF positive temperature coefficient, Kelvin source, easy to drive, low stray inductance, high level of integration, and aluminium nitride substrate for improved thermal performance. The devices offer excellent performance in high frequency operation, direct mounting to heat sinks (isolated packages), low thermal resistance of the enclosure, and solderable power and signal terminals for easy PCB mounting. Small form factor and RoHS compliant.
Product Attributes
Technology: Silicon Carbide (SiC)
Configuration: 4 N-channels (triple inverters)
Drain-source voltage (Vdss): 1200V (1.2kV)
Current at 25°C - Continuous Drain (Id): 89A (Tc)
On-resistance (max) at different Id, Vgs: 31 milliohms @ 40A, 20V
Vgs(th) at varying Id (max): 2.8V @ 1mA
Gate Charge (Qg) at Vgs (max): 232nC @ 20V
Input capacitance (Ciss) at varying Vds (max): 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: SP3F
Applications
● Uninterruptible Power Supplies
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