sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:BSM450D12P4G102
Data Manual:BSM450D12P4G102.pdf
Brand:ROHM
Particular Year:23+
Package:MODULE
Delivery Date:New and Original
Stock: 1000pcs
BSM450D12P4G102 1200V, 447A, Half Bridge, All SiC Power Module with Trench MOSFETs.
Specification
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel
FET Function: Standard
Drain-source voltage (Vdss): 1200V (1.2kV)
Current at 25°C - Continuous Drain (Id): 447A (Tc)
Vgs(th) at different Id (max) 4.8V @ 218.4mA
Input Capacitance (Ciss) at Vds (Max): 44000pF @ 10V
Power - Max: 1.45kW (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: Module
Applications
Motor drives
Inverters, converters
Photovoltaics, wind power
Induction heating equipment
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