sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:CAS310M17BM3
Data Manual:CAS310M17BM3.pdf
Brand:Wolfspeed
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
The CAS310M17BM3 Wolfspeed 1700V SiC Half Bridge Module has an industry standard 62mm footprint and consists of a copper substrate with an aluminium nitride insulator. These modules feature ultra-low loss, high frequency operation, zero MOSFET turn-off tail current, and zero diode reverse recovery. Due to the low switching and conduction losses of SiC, the half-bridge modules have a 62mm form factor, allowing for system modifications and improved efficiency. The modules feature a -40°C to 150°C virtual junction temperature range, 310A current (ID), and -40°C to 125°C case temperature range.
Features
● Industry standard 62mm footprint
● Ultra-low loss, high frequency operation
● Zero reverse recovery from diode
● Zero turn-off tail current from MOSFETs
● Normally open, fail-safe device operation
● Copper substrate and aluminium nitride insulator
Applications
● Induction heating
● Motor drives
● Renewable energy
● Railway auxiliary and traction
● Electric vehicle fast charging
● UPS and SMPS
Model
Brand
Package
Quantity
Describe
ST
8-PowerVDFN
2000
Automotive-grade dual N-channel STripFET™ F7 Power MOSFET Transistors
Microchip
Module
1000
MOSFET - Arrays 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 1.492kW (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Array 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 1.846kW (Tc), 1.161kW (Tc) Chassis Mount
Microchip
Module
10000
MOSFET - Arrays 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 602W (Tc), 395W (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Arrays 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 1.253kW (Tc), 613W (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Arrays 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 395W (Tc), 365W (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Arrays 700V 52A (Tc), 110A (Tc) 141W (Tc), 292W (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Array 1200V (1.2kV) 420A (Tc) 1.753kW (Tc) Chassis Mount
Microchip
Module
1000
MOSFET - Array 1200V (1.2kV) 173A (Tc) 745W (Tc) Chassis Mount
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
CAB6R0A23GM4T
CAB6R0A23GM4T is 2300 V, 6 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB6R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…CAB7R5A23GM4T
CAB7R5A23GM4T is 2300 V, 7.5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB7R5A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce cree…CAB5R0A23GM4T
CAB5R0A23GM4T is 2300 V, 5 mΩ, GM package, Half-Bridge SiC Power Module with Pre-Applied Thermal Interface Material.Feature of CAB5R0A23GM4TLeading silicon carbide MOSFET technology in an industry standard form factorHigh CTI housing to reduce creepa…C3M0280090J
The C3M0280090J is a 900 V silicon carbide power MOSFET with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. Typical applications include: renewabl…C3M0160120D
The C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-2…C3M0350120J
The C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 pack…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: