sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:CAB760M12HM3
Data Manual:CAB760M12HM3.pdf
Brand:Wolfspeed
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
The CAB760M12HM3 Wolfspeed HM3 High Performance Half Bridge Module is a switching-optimised, all-SiC, low inductance half bridge module in a compact size (110mm x 65mm x 12.2mm).The HM3 element utilises switching-optimised, third-generation Silicon Carbide MOSFET technology. Compatible with 62mm lightweight ALSiC substrates to support system modifications. Other features include an operating junction temperature of +175°C and a highly reliable silicon nitride insulator. HM3 high-performance half-bridge modules are ideally suited for use in rail/traction, solar, electric vehicle chargers, and industrial automation/test applications.
Product Attributes
Technology: Silicon Carbide (SiC)
Configuration: 2 N-channels (Half Bridge)
Drain Source Voltage (Vdss): 1200V (1.2kV)
Current at 25°C - Continuous Drain (Id): 1015A (Tc)
On-resistance (max) at different Id, Vgs: 1.73 milliohms @ 760A, 15V
Vgs(th) at different Id (max): 3.6V @ 280mA
Gate Charge (Qg) at Vgs (max): 2724nC @ 15V
Input Capacitance (Ciss) at Vds (max): 79400pF @ 800V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: Module
Applications
● Railway and Traction
● Solar
● Electric Vehicle Chargers
● Industrial automation and test
Model
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Describe
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Automotive-grade dual N-channel STripFET™ F7 Power MOSFET Transistors
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MOSFET - Arrays 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 1.492kW (Tc) Chassis Mount
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MOSFET - Arrays 1700V (1.7kV), 1200V (1.2kV) 124A (Tc), 89A (Tc) 602W (Tc), 395W (Tc) Chassis Mount
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MOSFET - Array 1200V (1.2kV) 420A (Tc) 1.753kW (Tc) Chassis Mount
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1000
MOSFET - Array 1200V (1.2kV) 173A (Tc) 745W (Tc) Chassis Mount
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