sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTMYS2D2N06CLTWG
Data Manual:NTMYS2D2N06CLTWG.pdf
Brand:ON
Particular Year:23+
Package:LFPAK4
Delivery Date:New and Original
Stock: 1000pcs
NTMYS2D2N06CLTWG N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced power trench process combined with shielded gate technology optimised to minimise on-resistance, in addition to excellent soft diodes that maintain excellent switching performance. A variety of small package options are available for increased design flexibility.
Product Attributes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 60 V
Current at 25°C - Continuous Drain (Id): 31A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
On-resistance (max) at different Id, Vgs: 1.9 mOhm @ 50A, 10V
Vgs(th) at different Id (max): 2V @ 180µA
Gate Charge (Qg) (max) at varying Vgs: 69 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 4850 pF @ 25 V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Package/Housing: SOT-1023, 4-LFPAK
Applications
● ORing
● Motor Drivers
● DC-DC converters
● Power load switches
● Battery management
● High-end computing
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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