sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTMFS002N10MCLT1G
Data Manual:NTMFS002N10MCLT1G.PDF
Brand:ON
Particular Year:23+
Package:5-DFN
Delivery Date:New and Original
Stock: 1000pcs
The NTMFS002N10MCLT1G is an industrial grade power MOSFET in a 5mm x 6mm flat lead package. The MOSFET is designed for efficient compact designs with high heat dissipation performance. The NTMFS002N10MCLT1G has low RDS(on), low QG, capacitance, and is RoHS compliant.
Product attribute
FET type: N channel
Technology: MOSFET (Metal oxide)
Drain-source voltage (Vdss) : 100 V
Current at 25°C - Continuous drain (Id) : 22A (Ta), 175A (Tc)
Driving voltage (Max Rds On, min Rds On) : 4.5V, 10V
On-resistance (Max.) at different ids and Vgs: 2.8 milliohm @ 50A, 10V
Vgs(th) (Max.) for different ids: 3V@351 µA
Gate charge (Qg) at different Vgs (Max.) : 97 NC-@10 V
Vgs (Max.) : ±20V
Input capacitance (Ciss) at different Vds (Max.) : 7200 PF-@50 V
Power dissipation (Max) : 3W (Ta), 189W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier Package: 5-DFN (5x6) (8-SOFL)
Apply
● Synchronous rectification in USB Type C design
● Switching power supply
● DC-primary MOSFETs in DC modules
● Reverse battery protection
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