sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTHL015N065SC1
Data Manual:NTHL015N065SC1.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The NTHL015N065SC1 12mΩ Silicon Carbide MOSFET is available in a TO-247-3L package for a fast and rugged design. The devices feature 10x dielectric breakdown field strength and 2x electron saturation speed. These MOSFETs also feature 3x energy band gap and 3x thermal conductivity.The NTHL015N065SC1 is AEC-Q101 compliant and has a PPA option, specifically designed for and meeting the requirements of automotive applications.
Product Properties
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 650 V
Current at 25°C - Continuous Drain (Id): 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 18 mOhm @ 75A, 18V
Vgs(th) at different Id (max): 4.3V @ 25mA
Gate Charge (Qg) at Vgs (max): 283 nC @ 18 V
Vgs (max): +22V, -8V
Input capacitance (Ciss) at different Vds (max): 4790 pF @ 325 V
Power Dissipation (Max): 643W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package/Housing: TO-247-3
APPLICATIONS
● Switched Mode Power Supplies (SMPS)
● Solar inverters
● Uninterruptible power supplies (UPS)
● Energy storage
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