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Service Telephone:86-755-83294757
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Product Description:600 V, 30 A ultra-high-speed trench gate field cut-off V series IGBT
Package:TO-247-3Product Description:Grooved gate field-stop IGBT transistor, M series, 650 V, 10 A, low loss
Package:TO-247-3Product Description:N-channel 1200 V, 30 A ultra-fast PowerMESH IGBT single tube
Package:TO-247-3Product Description:N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
Package:PowerFLAT 8x8Product Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:Automotive N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:1700 V 3.7A N-channel SiC power MOSFET Transistors
Package:TO-3PFM-3Product Description:1200V 21 mΩ Silicon carbide Power MOSFET Transistors
Package:TO-247-4Product Description:650V 118A N-channel SiC power MOSFET Transistors
Package:TO-247-3Product Description:750V 11.4mΩ Automotive Silicon Carbide Power MOSFET Transistors
Package:HU3PAK-7Product Description:N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Package:TO-247-3Product Description:N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Package:TO-247-3Product Description:N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Package:TO-247-3Product Description:Automotive N-Channel Enhancement Mode E-Series Silicon Carbide Power MOSFET Transistors
Package:TO-247-4Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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