[TI Main] Half Bridge GaN Driver LMG1025QDEETQ1 for High Side and Low Side Outputs

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[TI Main] Half Bridge GaN Driver LMG1025QDEETQ1 for High Side and Low Side Outputs

Source:our siteTime:2023-02-18Views:

Shenzhen Mingjiada Electronics Co., Ltd. is pleased to announce the launch of the TI low-side driver LMG1025QDEETQ1, a 7A/5A single channel low-side gate driver for automotive applications with 5V UVLO for narrow pulse applications.

Model: LMG1025QDEETQ1

Year: Newest

Package: WSON-6

Description.

The LMG1025/LMG1025-Q1 half-bridge GaN driver is designed to drive high-side and low-side enhanced gallium nitride (GaN) FETs in synchronous buck, boost or half-bridge configurations. the device features an integrated 100V bootstrap diode and separate inputs for high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using bootstrap technology and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of the enhanced GaN FETs. LMG1205/LMG1025-Q1 have TTL logic compatible inputs and can withstand input voltages up to 14V regardless of VDD voltage. LMG1205/LMG1205-Q1 have separate gate outputs, allowing separate and flexible regulation of on and off intensity.

In addition, the LMG1205/LMG1025-Q1 has a strong current-flooding capability, which keeps the gate low and thus prevents accidental turn-on during switching. The LMG1025-Q1 devices comply with AEC-Q100 standards for automotive applications.

Features

Independent high-side and low-side TTL logic inputs

1.2A peak current, 5A fill current

High-side floating bias voltage rail with operating voltage up to 100VDC

Internal bootstrap supply voltage clamp

Separate outputs for adjustable on and off strength

0.6Ω pull-down resistor, 2.1Ω pull-up resistor

Fast propagation time (35ns typical)

Excellent propagation delay matching (1.5ns typical)

Power rail undervoltage lockout

Low power consumption

Applications