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Micron announced that LPDDR5X memory is now shipping in volume production after being incorporated into the main architecture design of Qualcomm Snapdragon 8 Gen 2 chips.
On November 21, Micron announced that LPDDR5X memory has now been shipped in mass production after being incorporated into the main architecture design of Qualcomm's Snapdragon 8 Gen 2 chip, according to a report by Taiwan's United Press.
Micron's next-generation process technology for low-power LPDDR5X mobile memory can reach a maximum rate of 8.5Gb/s. In addition to mobile applications, DRAM products based on 1β nodes also feature low latency, low power consumption and high performance. Compared to the previous generation of 1alpha nodes, 1beta technology can improve energy efficiency by approximately 15%, increase memory density by more than 35%, and reach 16Gb capacity per die.
According to the report, the latest LPDDR5X is designed for high-end and flagship smartphones. According to the Taiwanese media, Micron's senior vice president and general manager of the mobile business unit said that Micron's highest-speed LPPDR5X is now in mass production and available worldwide.
In addition, Qualcomm's vice president of product management noted that high-speed memory is essential to achieve the lightning-fast internet, dynamic experience and groundbreaking performance claimed by Snapdragon 8 Gen 2. Micron's LPDDR5X memory is capable of up to 8.5Gbps, providing unprecedented ultra-high speed and power consumption performance that Qualcomm's chipsets need.
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
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