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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Home /Company Dynamics /

Recycle (Infineon) DD1000S33HE3 3300 V 1000 A Diode IGBT Module

Recycle (Infineon) DD1000S33HE3 3300 V 1000 A Diode IGBT Module

Source:our siteTime:2024-11-11Views:

Overview:The DD1000S33HE3 IHV-B 3300 V, 1000 A 130mm diode module uses EC3 diodes to create an excellent solution for traction and industrial applications. Designed for use in conjunction with the third generation IGBT products.Features:Electrical cha…

Overview:

The DD1000S33HE3 IHV-B 3300 V, 1000 A 130mm diode module uses EC3 diodes to create an excellent solution for traction and industrial applications. Designed for use in conjunction with the third generation IGBT products.


Features:

Electrical characteristic

• VCES = 3300V

• IC nom = 1000A / ICRM = 2000A

• High DC voltage stability

• Low switching loss

Mechanical characteristic

• Aluminum silicon carbide (AlSiC) substrate provides higher temperature cycling capability

• Encapsulated CTI>600

• IHMB package

• Insulated substrate


Specifications of DD1000S33HE3:

Diode configuration: 2 independent

Technology: Standard

Voltage - DC reverse (Vr) (Max) : 3300 V

Current - Average rectification (Io) (per diode) : 1000A (DC)

Voltage with different If - forward (Vf) : 3.85V@1000A

Speed: Standard recovery >500ns, > 200mA (Io)

Operating temperature - junction: -40°C ~ 150°C

Installation type: Base installation

Package/shell: Module

Supplier device package: AG-IHVB130-3


Applications:

• Medium voltage converter

• Motor drive

• Traction converter

• UPS system

• Wind turbine


Supply and Demand FS3L400R10W3S7FB11 EasyPACK ™ 950 V 200 A Easy3B Module- (Infineon) Return to
column Intel ® Stratix ® 10 GX FPGA (1SG250HN3F43E3VGAS) Field Programmable Gate Array

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