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Mingjiada Supply Renesas F1421NLGK8 RF Amplifier RF MIXER 0.35 UM SIGE BIC MOS

Mingjiada Supply Renesas F1421NLGK8 RF Amplifier RF MIXER 0.35 UM SIGE BIC MOS

Source:our siteTime:2024-11-08Views:

Shenzhen Mingjiada Electronics Co., Ltd Original Spot Supply Renesas F1421NLGK8 RF Amplifier RF MIXER 0.35 UM SIGE BIC MOSDescription of Renesas F1421NLGK8 RF AmplifierThe F1421NLGK8 is a high gain/high linearity RF amplifier for high performance RF a…

Shenzhen Mingjiada Electronics Co., Ltd Original Spot Supply Renesas F1421NLGK8 RF Amplifier RF MIXER 0.35 UM SIGE BIC MOS


Description of Renesas F1421NLGK8 RF Amplifier

The F1421NLGK8 is a high gain/high linearity RF amplifier for high performance RF applications.The F1421NLGK8 has a gain of 20.3dB, an OIP3 of +40dBm, and a noise figure of 5.5dB at 1.9GHz.The device operates from a single 5V supply and a 138mA ICC.


In a typical base station, the RF amplifier is used in the RX and TX communication paths to increase the signal level. the F1421NLGK8 amplifier is packaged in a QFN package and fabricated using a silicon chip, which makes it extremely reliable.


Typical Applications

 Multi-mode, multi-carrier transmitters

 PCS1900 base station

 DCS1800 base station

 WiMAX and LTE base stations

 UMTS/WCDMA 3G base stations

 PHS/PAS base stations

 Public Safety Infrastructure


Features

 Wideband 1.7GHz to 2.2GHz

 Typical gain of 20.3dB at 1.9GHz

 Noise figure of 5.5dB at 1.9GHz

 +40dBm OIP3 at 1.9GHz

 +23dBm output P1dB at 1.9GHz

 Single 5V supply voltage

 ICC = 138mA

 -40°C to +105°C Operating Temperature

 50Ω single-ended input/output impedance

 Standby mode to save power

 4mm x 4mm, 24-pin QFN package


Figure 1. F1421NLGK8 RF Amplifier Block Diagram

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Figure 2. F1421NLGK8 QFN Package Pin Assignment - Top View

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For product specifications of the F1421NLGK8 RF amplifier, please contact customer service at +86 13410018555 (Wechat synchronous) or email sales@hkmjd.com.


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