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Service Telephone:86-755-83294757
Product Introduction:The Qorvo UG4SC075009K4S 750V 8.4mΩ combination FET integrates 750V SiC JFET and low-voltage Si MOSFETs in a single TO-247-4L package. The design enables a normally closed switch while benefiting from ultra-low on-resistance [RDS…
Product Introduction:
The Qorvo UG4SC075009K4S 750V 8.4mΩ combination FET integrates 750V SiC JFET and low-voltage Si MOSFETs in a single TO-247-4L package. The design enables a normally closed switch while benefiting from ultra-low on-resistance [RDS(on)] and the robustness of a normally open SiC JFET.
The UG4SC075009K4S combination FET is ideal for high energy switches in circuit protection. For switching mode power conversion, the device has separate access to JFET and MOSFETs, which enhances speed control and simplifies the parallel connection of multiple devices.
UG4SC075009K4S specifications:
Technology: SiC
Installation style: Through Hole
Package/housing: TO-247-4
Transistor polarity: N-Channel
Configuration: Single
Vds- drain-source breakdown voltage: 750 V
Vgs- Gate source breakdown voltage: -30 V to 30 V
Drain-source current at Vgs=0:4 uA
Id- Continuous drain current: 106 A
Rds On- drain-source on-resistance: 8.4 mOhms
Pd- Power dissipation: 375 W
Operating temperature: -55 °C to + 175°C
Series: UG4S
Trademark: Qorvo
Product type: SiC JFETs
Target application:
Solid state/semiconductor circuit breakers
Solid state/semiconductor relays
Battery disconnect
Surge protection
Surge current control
High Power Switching Mode Converter (>25kW)
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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