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Infineon Silicon Carbide SiC_FF17MR12W1M1HPB11_EasyDUAL™ 1B 1200 V, 33 mΩ Half Bridge Module

Infineon Silicon Carbide SiC_FF17MR12W1M1HPB11_EasyDUAL™ 1B 1200 V, 33 mΩ Half Bridge Module

Source:our siteTime:2024-10-29Views:

Mingjiada Electronics [Supply] Infineon Silicon Carbide SiC FF17MR12W1M1HPB11 Half Bridge 1200V Module with Integrated CoolSiC™ MOSFETsDescription: FF17MR12W1M1HPB11The EasyDUAL™ 1B 1200 V, 33 mΩ half-bridge module features a first-generation enhan…

Mingjiada Electronics [Supply] Infineon Silicon Carbide SiC FF17MR12W1M1HPB11 Half Bridge 1200V Module with Integrated CoolSiC™ MOSFETs

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Description: FF17MR12W1M1HPB11

The EasyDUAL™ 1B 1200 V, 33 mΩ half-bridge module features a first-generation enhanced CoolSiC™ MOSFET, integrated NTC temperature sensor, pre-coated thermal interface material, and PressFIT crimp technology.


Features: FF17MR12W1M1HPB11

12 mm high best-in-class package

Combines leading edge wide bandwidth materials in an easy modular package

Very low module stray inductance

Wide reverse bias safe operating area (RBSOA)

1200 V CoolSiC™ MOSFET with first generation enhanced trench technology 

Increased recommended gate drive voltage window: extended from +15 to +18 V and from 0 V to -5 V

Extended maximum gate-source voltages: +23 V and -10 V

Operating junction temperature Tvjop up to 175°C under overload conditions 

PressFIT pin

Integrated NTC temperature sensor

Thermal interface material


Specification: FF17MR12W1M1HPB11

Series: CoolSiC™  

Packaging: Tray  

Part Status: On Sale  

Technology: Silicon Carbide (SiC)  

Drain-Source Voltage (Vdss): 1200V (1.2kV)  

Mounting Type: Chassis Mount  

Package/Housing: Module  

Supplier Device Package: AG-EASY1B 


Applications

High frequency switching applications

DC/DC converters

UPS Systems

Electric Vehicle DC Charging


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