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STMicroelectronics (ST) introduces the fourth generation of STPOWER Silicon Carbide (SiC) MOSFET technology. Fourth-generation technologies are expected to become new market benchmarks in three areas: energy efficiency, power density and robustness. While meeting the needs of the automotive and industrial markets, STMicroelectronics has also optimized fourth-generation technology for inverters, a key component of the electric vehicle drive system. The company plans to introduce more advanced SiC technology innovations by 2027 to fulfill its innovation commitment.

Marco Cassis, President of STMicroelectronics Analog, Power and Discrete Devices, MEMS and Sensor Products (APMS), said: "STMicroelectronics is committed to providing the market with cutting-edge silicon carbide technology that will drive the future of electric vehicles and energy-efficient industries. We will continue to innovate in devices, advanced packages and power modules to advance SiC MOSFET technology. In combination with our supply chain vertically integrated manufacturing strategy, we are building a resilient supply chain by providing industry-leading SiC technology to meet the growing needs of our customers and contribute to a more sustainable future."

As the market leader in SiC power MOSFETs, STMicroelectronics is further advancing technological innovation to take full advantage of SiC's higher energy efficiency and power density than silicon-based devices. The latest generation of SiC devices are designed to improve the electric drive inverter platform for future electric vehicles, further unlocking the miniaturization and energy saving potential. Despite the growing electric vehicle market, there are still challenges to achieving widespread adoption, and automakers are exploring the introduction of electric vehicles that are affordable to ordinary consumers. The SiC based 800V electric vehicle platform electric drive system enables faster charging speeds, reduces the weight of electric vehicles, and helps automakers produce high-end models with longer driving ranges. Available in 750V and 1200V voltage classes, STMicroelectronics' new SiC MOSFETs improve the energy efficiency and performance of 400V and 800V EV platform electric drive inverters, respectively. Mid-size and compact models are two important automotive segments. Bringing SiC's technological advantages down to these two markets will help make electric vehicles acceptable to the general public. In addition to trams, the new generation SiC technology is also suitable for a variety of high-power industrial equipment, including growing applications such as solar inverters, energy storage solutions and data centers, helping them to significantly improve their energy efficiency.

Product schedule

STMicroelectronics has now completed the pre-production certification for the 750V voltage class of the fourth-generation SiC technology platform and is expected to complete the 1200V voltage class certification in the first quarter of 2025. Products with nominal voltages of 750V and 1200V will then be available for sale, ranging from standard mains voltages to high-voltage electric vehicle batteries and chargers to meet designers' various application development needs.

Application scenario

STMicroelectronics' fourth-generation SiC MOSFET solutions are more energy efficient, smaller in size, lighter in weight and longer in battery life than silicon-based solutions. These advantages are critical to achieving widespread adoption of electric vehicles. First-tier electric vehicle manufacturers are partnering with STMicroelectronics to introduce fourth-generation SiC technology into their new models to improve performance and energy efficiency. Although the main application is electric vehicle electric drive inverters, STMicroelectronics' fourth-generation SiC MOSFETs are equally suitable for high-power industrial motor drivers, because the new generation of products improves switching performance and robustness, making motor controllers more efficient and reliable, reducing energy consumption and operating costs in industrial environments. In renewable energy applications, fourth-generation SiC MOSFETs can improve the energy efficiency of solar inverters and energy storage systems, contributing to sustainable and more cost-effective energy solutions. In addition, the technical characteristics of the high energy efficiency and compact size of the new generation of SiC MOSFETs are critical to solving the huge power demands and thermal management challenges, suitable for the power supply of AI server data centers.

Technology development planning

STMicroelectronics is accelerating the development of SiC power devices through its vertically integrated manufacturing strategy and is also developing several SiC technology innovations that will drive significant improvements in power device technology over the next three years. Future fifth-generation SiC power devices will feature high power density innovations based on new processes. ST is simultaneously developing a breakthrough innovation that promises to achieve better on-resistance RDS(on) parameters at high temperatures, further reducing RDS(on) compared to existing SiC technologies.

ST will present its latest research and development in SiC and other wide band gap semiconductors at ICSCRM Science Industry Conference 2024. The event will take place in Raleigh, North Carolina from September 29 to October 4, 2024, This will include ST technology presentations and a keynote on "High volume industrial environment for leading edge technologies in SiC" (creating a mass production industrial environment for SiC cutting-edge technologies).

For more information, please visit https://www.st.com/content/st_com/en/events/ICSCRM-2024.html.

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