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The NTTFSSCH1D3N04XL is a high-performance N-channel power MOSFET designed for handling high-current scenarios, especially suitable for DC-DC converters (DC-DC) in data centers and cloud applications. The following are its core features and applications:

The ultra-low 1.3mΩ Rds(on) enhances the system efficiency

Low Qg and capacitance can minimize driving and switching losses to the greatest extent

Board-level reliability (BLRT test) : 1000 cycles (-40°C to +125°C, 10 minutes). dwell, +20°C/min, 6 layers 2.35T

It adopts advanced bottom-source center gate dual-cooling packaging technology, featuring excellent thermal conductivity

Package size: 3.3mm x 3.3mm x 0.58mm

Lead-free, halogen-free, BFR-free, and in compliance with the RoHS Directive

Application scenarios

The NTTFSSCH1D3N04XL is suitable for the following scenarios:

Cloud system

Data Center /IBC

Power Unit (PSU

Description

The onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET is designed to handle high currents, which is crucial for the DC-DC power conversion stage. This 40V, 207A, single N-channel power MOSFET features a lower on-resistance, higher power density and excellent heat dissipation performance.

This shielded gate trench design features an ultra-low gate charge and 1.3mΩ RDS(on). Compact 3.3mmx3.3mm lower source dual cooler second-generation package, lead-free, halogen-free, BFR-free, in compliance with RoHS directive. The NTTFSSCH1D3N04XL T10 PowerTrench MOSFET is designed to provide efficient solutions for data centers and cloud applications.

Core parameters

Product: NTTFSSCH1D3N04XL

FET type: N-channel

Technology: MOSFET (Metal Oxide)

Drain-source voltage (Vdss) : 40 V

Current at 25°C - continuous drain (Id) : 207A (Tc)

Drive voltage (maximum Rds On, minimum Rds On) : 4.5V, 10V

On-resistance (maximum value) at different ids and Vgs: 1.3 milliohms @ 24A, 10V

Vgs(th) (maximum value) at different ids: 2.2V @ 120µA

Gate charge (Qg) at different Vgs (maximum value) : 28 nC @ 6 V

Vgs (maximum value) : ±20V

Input capacitance (Ciss) at different Vds (maximum value) : 3480 PPF @ 20 V

FET function: -

Power dissipation (maximum) : 107W (Tc)

Operating temperature: -55°C to 175°C (TJ)

Installation type: Surface mount type

Package: 9-WDFN (3.3x3.3)

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