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Supply Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V

Supply Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V

Source:our siteTime:2024-09-28Views:

Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V in PQFN 3.3x3.3 drop-source package, Acquisition of N-Channel Power MOSFETsDescripcinThe IQE220N15NM5 is part of the Source-Down series …

Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V in PQFN 3.3x3.3 drop-source package, Acquisition of N-Channel Power MOSFETs


Descripción

The IQE220N15NM5 is part of the Source-Down series with an RDS(on) of 22 mOhm. Source-Down technology uses a flip-flop silicon chip that is inverted inside the component.


It improves heat dissipation, power density and layout possibilities. The new technology is available with two different footprints: standard gate and centre gate (optimised for parallelisation).


Features

RDS(on) of 22 mOhm

Better RthJC compared to PQFN packages

Standard gate footprint available

New optimised layout possibilities


Benefits

Highest power density and performance

Excellent thermal performance

Efficient use of space

Standard gate for easy layout installation

Improved PCB losses

Reduced parasitics


Potential Applications

Drive

SMPS

Servers

Telecommunications

Battery Management


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