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August 28, 2024 - ON Semiconductor supplies the latest generation of silicon and silicon carbide hybrid power integrated modules (PIMs) in the F5BP package, ideally suited for increasing the power of large solar string inverters or energy storage systems (ESS). Compared to previous generations, these modules offer higher power density and efficiency for the same size, increasing the total system power of solar inverters from 300 kW to 350 kW. This means that large solar farms with an installed capacity of one gigawatt using the latest generation of modules can realise energy savings of nearly two megawatts per hour, which is the equivalent of powering more than 700 homes per year. In addition, fewer modules are required to achieve the same power as the previous generation, reducing component costs for power devices by more than 25 per cent.

With the lowest levelised cost of energy (LCOE), solar power is increasingly becoming the world's preferred choice for renewable energy generation. To compensate for the volatility of solar power, utility operators are also adding large-scale battery energy storage systems (BESS) to ensure a steady supply of energy to the grid. To support this combination of systems, manufacturers and utilities need solutions that provide the highest efficiency and reliable power conversion. Each 0.1 per cent improvement in efficiency can result in an annual operating cost savings of $250,000 per gigawatt of installed capacity.

‘As a volatile energy source dependent on sunlight, we need to continually improve system efficiency and reliability with advanced energy storage solutions to ensure the stability and reliability of the global power grid during peak and off-peak power demand.’ Sravan Vanaparthy, vice president, Industrial Power, ON Power Solutions Business Group, said, ‘More efficient infrastructure will drive adoption and ensure that as more solar power facilities are built, less energy is wasted, propelling us forward on the path away from fossil fuels.’

The F5BP-PIM integrates a 1050V FS7 IGBT and a 1200V D3 EliteSiC diode to enable high-voltage and high-current conversion while reducing power consumption and improving reliability.The FS7 IGBT has low turn-off losses, reducing switching losses by up to 8 per cent, while the EliteSiC diode provides excellent switching performance, with a 15 per cent reduction in the on-state voltage drop (VF) compared to previous generations. (VF) is reduced by 15 percent compared to previous generations.

These PIMs include an inverter module with an innovative type I midpoint clamping (INPC) topology and a boost module with a flying across capacitor topology. These modules also use an optimised electrical layout and advanced direct copper bonding (DBC) substrates to reduce stray inductance and thermal resistance. In addition, the copper substrate further reduces the junction-to-heatsink thermal resistance by 9.3 per cent, ensuring that the modules remain cool under heavy load. This thermal management is critical to maintaining the efficiency and longevity of the module, making it highly effective in demanding applications that require reliable and continuous power.