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Nexperia today announced another expansion of its popular power bipolar junction transistor (BJT) portfolio with the introduction of ten standard products and ten automotive-grade products in the DFN2020D-3 package. These new devices are rated at 50 V and 80 V and support the 1 A to 3 A current range of NPN and PNP polarity, further cementing Nexperia's position as a leading supplier in the market. With this launch, Nexperia delivers the majority of its power BJT in the DFN package, meeting designers' need for a space - and energy-saving package to replace the older SOT223 and SOT89 packages.

The DFN2020D-3 package provides significant board space savings compared to the pin-based device. For example, it reduces board space by 80 percent compared to SOT89 and 90 percent compared to SOT223. The DFN2020D-3 package also features side wettable pads for automatic optical inspection (AOI) of solder joints, ensuring increased robustness and reliability.

In addition to general-purpose transistors, Nexperia has also released a series of low-Vcesat devices, such as the PBS5350PAS-Q. These devices combine ultra-low saturation voltage and high current gain to help improve energy efficiency in many power applications. Low VCEsat transistors perform well and can replace standard transistors in larger packages, allowing for more compact designs on smaller PCBS. For more technical information on low VCEsat technologies, see this blog post.

For engineers working with bipolar junction transistors, Nexperia offers the BJT Application Manual, a practical, comprehensive, and up-to-date reference written by engineers for engineers to read. This enables design engineers to better understand bipolar transistors, their fundamentals, thermal performance considerations, and application insights.

To learn about Nexperia bipolar transistor for more information, please visit: https://www.nexperia.com/products/bipolar-transistors

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