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Seoul, South Korea, August 29, 2024 - SK Hynix (or 'the Company', https://www.skhynix.com) announced today that it has successfully developed the world's first 16Gb (Gigabit) DDR5 DRAM using the sixth-generation 10-nanometer (1c) process. Thus, the company showed the world the ultra-fine storage technology of less than 10 nanometers.

SK Hynix said, "As 10-nanometer DRAM technology has been passed down from generation to generation, the difficulty of microfabrication has increased, but the company has been the first to break the technological limit by improving the design completion based on the fifth-generation (1b) technology, which has been recognized for the highest performance in the industry." "The company will complete the mass production of 1c DDR5 DRAM by the end of this year and will lead the development of the semiconductor memory market by supplying products from next year."

The company developed the 1c process as an extension of the 1b DRAM platform. The SK Hynix technical team believes that this will not only reduce the possibility of trial and error in the process of process upgrading, but also transfer the advantages of SK Hynix 1b process, which is recognized in the industry for the highest performance DRAM, to 1c process in the most efficient way.

In addition, SK Hynix has developed and applied new materials in some EUV processes and optimized the EUV process throughout the process, thus ensuring cost competitiveness. At the same time, design technology innovations have also been made on the 1c process, which has increased its productivity by more than 30% compared to the previous generation 1b process.

The 1c DDR5 DRAM will mainly be used in high-performance data centers and will run at 8Gbps (8 gigabits per second), an 11 percent increase in speed compared to the previous generation. In addition, energy efficiency has increased by more than 9%. With the advent of the AI era, the power consumption of data centers continues to increase, and if global customers operating cloud services adopt SK Hynix 1c DRAM into their data centers, the company predicts that their electricity bills can be reduced by up to 30 percent.

Kim Jong-hwan, vice president of DRAM development at SK Hynix, said, "The 1c technology offers the highest performance and cost competitiveness, and we are providing differentiated value to our customers by applying it to our most advanced DRAM products such as the next-generation HBM, LPDDR6 and GDDR7. "We will continue to maintain our leadership in the DRAM market and consolidate our position as the most trusted AI-powered memory solution company."

More information is available at www.hkmjd.com