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Infineon-ISK018NE1LM7AULA1 129 A, 15V N-Channel Power MOSFET

Infineon-ISK018NE1LM7AULA1 129 A, 15V N-Channel Power MOSFET

Source:our siteTime:2024-08-17Views:

Overview:The ISK018NE1LM7, part of the industrys first 15 V rated channel power MOSFETs product family, features an extremely low RDS(on) of 2.15 mOhm while providing pulse current capability of more than 500 A with a typical thermal resistance juncti…

Overview:

The ISK018NE1LM7, part of the industry's first 15 V rated channel power MOSFETs product family, features an extremely low RDS(on) of 2.15 mOhm while providing pulse current capability of more than 500 A with a typical thermal resistance junction (RthJC) of 1.6 K/W at the bottom of the housing. The small package of 4 mm2 provides significant space savings, flexible PCB layout, and improved form factor.


Features

N channel, logic level

Very low on-resistance

Superheat resistance

100% avalanche test

Lead-free plating; RoHS compliance

Halogen-free, in accordance with IEC61249-2-21

Optimize high performance SMPS, such as synchronous rectification


Potential Applications

• SMPS

• Computer network server

• Data communication

• Artificial Intelligence

封装图片.png

Product name: ISK018NE1LM7AULA1

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 15 V

Current at 25°C - Continuous drain (Id) : 30A (Ta), 129A (Tc)

Driving voltage (Max Rds On, min Rds On) : 4.5V, 7V

On-resistance (Max.) at different ids and Vgs: 1.8mm @ 20A, 7V

Vgs(th) (Max.) for different ids: 2V@106µA

Gate charge (Qg) at different Vgs (Max.) : 13.6N@7V

Vgs (Max.) : ±7V

Input capacitance (Ciss) at different Vds (Max.) : 1600 PF-@ 7.5V

FET function: -

Power dissipation (Max) : 2.1W (Ta), 39W (Tc)

Operating temperature: -55°C ~ 150°C (TJ)

Mounting type: Surface mount type

Supplier device package: PG-VSON-6-1

Package/case: 6-PowerVDFN


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