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Nano Micro Launches TOLL Package Version of Third-Generation Fast Silicon Carbide MOSFETs
Navitas today announced the addition of a rugged, thermal enhanced TOLL package to its latest third-generation fast silicon Carbide (G3F) MOSFETs portfolio that delivers efficient, stable power conversion for high-power, reliability demanding applicat…
Navitas today announced the addition of a rugged, thermal enhanced TOLL package to its latest third-generation fast silicon Carbide (G3F) MOSFETs portfolio that delivers efficient, stable power conversion for high-power, reliability demanding applications.
Navitas GeneSiC 650V Silicon Carbide MOSFETs successfully combine high power capabilities with the industry's best low on-resistance (20 to 55 Mω). It is optimized for the fastest switching speed, highest efficiency and higher power density characteristics required for applications such as AI data center power supply, electric vehicle charging and energy storage, and solar solutions.
Navitas GeneSiC silicon Carbide products are based on proprietary "grooved auxiliary grid" technology to provide the world's best efficiency performance over the operating temperature range. G3F MOSFETs offer high speed, low operating temperature rise performance, compared to other silicon carbide products on the market. Reduces the casing temperature of the device by up to 25°C and lasts up to three times longer.
Navitas' latest 4.5kW high power density AI server power supply reference design uses the GeneSiC G3F FETs model G3F45MT60L (rated 650V, 40mΩ, TOLL package) for interlaced CCM TP PFC topologies. Paired with the LLC GaNSafe™ gallium nitride power chip NV6515 (rated 650V, 35mΩ, TOLL package), this power supply is the world's most power-dense AI server power supply with a power density of 137W/inch³ and a peak efficiency of more than 97%. Similarly, in 400V EV battery systems, TolL-packaged G3F MOSFETs are ideal for on-board chargers (OBC), DC-DC converters, and 6.6kW-22kW traction motors.
Compared to the traditional D2PAK-7L package, the surface Sticker TOLL package has 9% lower crust resistance (RTH,J-C), 30% smaller PCB footprint, 50% less thickness and 60% less overall size, enabling the highest power density solutions such as Navitas' 4.5kW high power density AI server power supply. In addition, thanks to the smallest package inductance of only 2nH, excellent high-speed switching performance and minimal dynamic loss are achieved.
The Navitas G3F silicon carbide product line in TOLL packaging is now available for sale. For more information, please visit the Navitas website at www.navitassemi.com
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Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
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