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July 23 - In the face of an escalating climate crisis and surging global demand for energy, governments and businesses around the world are working hand-in-hand towards ambitious climate goals, committed to mitigating environmental impacts and realizing a sustainable future. Key to this is the electrification transition to reduce carbon emissions and the aggressive use of renewable energy. To accelerate progress toward this global transformation goal, ON (NASDAQ: ON) has launched its latest generation of silicon carbide technology platform, the EliteSiC M3e MOSFET, with multiple new generations planned through 2030.

Along the way, EliteSiC M3e MOSFETs will play a key role in accelerating universal electrification and enhancing implementation by delivering the performance and reliability of next-generation electrical systems at a lower kilowatt cost. With the ability to operate at higher switching frequencies and voltages, the platform effectively reduces power conversion losses, which is critical for a wide range of automotive and industrial applications such as electric vehicle powertrains, DC fast charging piles, solar inverters and energy storage solutions. In addition, the EliteSiC M3e MOSFETs will facilitate the shift to higher efficiency and higher power in data centers to meet the exponentially growing energy demands of sustainable AI engines.

Trusted Platform Enables Generational Leap in Efficiency

Leveraging ON Semiconductor's unique design and manufacturing capabilities, the EliteSiC M3e MOSFET significantly reduces conduction and switching losses on a reliable and field-proven planar architecture. The platform is capable of reducing conduction losses by 30 percent and turn-off losses by up to 50 percent compared to previous generations [based on in-house comparative testing with EliteSiC M3T MOSFETs]. By extending the life of SiC planar MOSFETs and leveraging EliteSiC M3e technology to deliver outstanding performance, ON ensures that the platform is robust and stable, making it the technology of choice for critical electrification applications.

EliteSiC M3e MOSFETs also offer ultra-low on-resistance (RSP) and short-circuit resistance, which is critical for main drive inverter applications that dominate the SiC market. Utilizing ON Semiconductor's advanced discrete and power module packaging, the 1200V M3e die is capable of delivering higher phase currents than previous EliteSiC technology, resulting in an approximately 20% increase in output power for the same size main drive inverter. In other words, while maintaining the same output power, the new design requires 20% less SiC material, costs less, and enables a smaller, lighter, more reliable system design.

In addition, ON offers a broader range of smart power technologies, including gate drivers, DC-DC converters, electronic fuses and more, all of which can be used with the EliteSiC M3e platform. These end-to-end integrated technology combinations of power switches, drivers and controllers, optimized and co-designed by ON Semiconductor, enable the integration of many advanced features and reduce overall system cost.

Accelerating Future Power Technologies

With global energy demand expected to increase dramatically over the next decade, increasing the power density of semiconductors has become critical. ON Semiconductor is actively following its Silicon Carbide technology blueprint, leading the industry in innovation from die architecture to new packaging technologies to continue to meet the industry's need for higher power density.

Each new generation of silicon carbide technology optimizes the cell structure to efficiently transfer more current in a smaller area, resulting in higher power density. Combined with the company's own advanced packaging technologies, ON Semiconductor is able to maximize performance and reduce package size. By bringing Moore's Law to the development of silicon carbide technology, ON can accelerate its roadmap by developing multiple generations of products in parallel to accelerate the introduction of multiple new EliteSiC products by 2030.

“With decades of deep experience in power semiconductors, we continue to push the boundaries of our engineering and manufacturing capabilities to meet the world's growing energy needs. “Silicon carbide has strong interdependencies between materials, device and packaging technologies,” said Mrinal Das, senior director of technical marketing for ON Power Solutions Business Group. Having complete control over these critical aspects gives ON Semiconductor a better grasp of the design and manufacturing process, resulting in faster time to market for new generations of products.”

Samples of the EliteSiC M3e MOSFET in the industry-standard TO-247-4L package are available now.

About onsemi

ONSEMI (NASDAQ: ON) is committed to driving disruptive innovation for a better future. Focusing on megatrends in automotive and industrial end markets, the company is accelerating transformative innovations in segments such as automotive functional electronics and automotive safety, sustainable grids, industrial automation, and 5G and cloud infrastructure. ON Semiconductor delivers a highly differentiated portfolio of innovative products as well as smart power and smart sensing technologies to solve the world's most complex challenges and lead the way in creating a safer, cleaner and smarter world.