sales@hkmjd.com
Service Telephone:86-755-83294757
Overview:The NVMYS9D3N06CLTWG Power MOSFET is a 60V, 9.2mΩ single n-channel MOSFET with a compact and efficient design and high thermal performance. The MOSFET features a low RDS(ON) to minimize on-off losses, as well as a low gate charge (QG) and ca…
Overview:
The NVMYS9D3N06CLTWG Power MOSFET is a 60V, 9.2mΩ single n-channel MOSFET with a compact and efficient design and high thermal performance. The MOSFET features a low RDS(ON) to minimize on-off losses, as well as a low gate charge (QG) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFETs are AEC-Q101 compliant with PPAP functionality. The MOSFET is suitable for battery reverse protection, power switches, switching power supplies, and other automotive applications that require enhanced board-level reliability.
Key Features:
Small occupying area (5mm x 6mm) and compact design
Low RDS(ON) minimizes on-off losses
Small QG and capacitors minimize driver losses
Drain-source voltage (VDSS) : 60V
Continuous drain current (ID) : 50A (TC = 25°C)
Drain-source on-resistance (RDS(on)) : 9.2mΩ
Industry standard LFPAK4 package
AEC-Q101 compliant with PPAP functionality
Lead-free, RoHS compliant
Applications
Reverse battery protection
Power switches (such as high-side drivers, low-side drivers, and half-bridges)
Electromagnetic driver
Motor control
Load switch
Switching power supply
Package size
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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