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Key features of onsemi NVMYS9D3N06CLTWG power MOSFET

Key features of onsemi NVMYS9D3N06CLTWG power MOSFET

Source:our siteTime:2024-07-22Views:

Overview:The NVMYS9D3N06CLTWG Power MOSFET is a 60V, 9.2mΩ single n-channel MOSFET with a compact and efficient design and high thermal performance. The MOSFET features a low RDS(ON) to minimize on-off losses, as well as a low gate charge (QG) and ca…

Overview:

The NVMYS9D3N06CLTWG Power MOSFET is a 60V, 9.2mΩ single n-channel MOSFET with a compact and efficient design and high thermal performance. The MOSFET features a low RDS(ON) to minimize on-off losses, as well as a low gate charge (QG) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFETs are AEC-Q101 compliant with PPAP functionality. The MOSFET is suitable for battery reverse protection, power switches, switching power supplies, and other automotive applications that require enhanced board-level reliability.


Key Features:

Small occupying area (5mm x 6mm) and compact design

Low RDS(ON) minimizes on-off losses

Small QG and capacitors minimize driver losses

Drain-source voltage (VDSS) : 60V

Continuous drain current (ID) : 50A (TC = 25°C)

Drain-source on-resistance (RDS(on)) : 9.2mΩ

Industry standard LFPAK4 package

AEC-Q101 compliant with PPAP functionality

Lead-free, RoHS compliant


Applications

Reverse battery protection

Power switches (such as high-side drivers, low-side drivers, and half-bridges)

Electromagnetic driver

Motor control

Load switch

Switching power supply


Package size

封装.jpg

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