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Shenzhen Mingjiada Electronics Co., Ltd.
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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Integrated Circuit Chip

Ethernet Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

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Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

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Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors Wire to Board Connectors

Sensor

Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

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Silicon Carbide MOSFET C2M0280120D SIC MOSFET 1200V RDS ON 280 mOhm

Silicon Carbide MOSFET C2M0280120D SIC MOSFET 1200V RDS ON 280 mOhm

Source:our siteTime:2024-07-16Views:

Shenzhen Mingjiada Electronics Co.,Ltd.New and Original Sale Silicon Carbide MOSFET C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement ModeBenefits- Higher system efficiency- Lower cooling requirements- Increased po…

Shenzhen Mingjiada Electronics Co.,Ltd.New and Original Sale Silicon Carbide MOSFET C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode


Benefits

- Higher system efficiency

- Lower cooling requirements

- Increased power density

- Increased system switching frequency


Product Attributes (C2M0280120D)

Manufacturer: Wolfspeed  

Product Category: Silicon Carbide MOSFETs  

Channel Mode: Enhancement  

Configuration: Single  

Fall-off time: 9.9 ns  

Forward transconductance - min: 2.8 S  

Id-continuous drain current: 10 A  

Maximum operating temperature: + 150 C  

Minimum Operating Temperature: - 55 C  

Mounting Style: Through Hole  

Number of Channels: 1 Channel  

Package / Case: TO-247-3  

Pd-Power Dissipation: 62.5 W  

Product type: SiC MOSFETS  

Qg-Gate charge: 5.6 nC  

Rds On-drain on-resistance: 280 mOhms  

Rise time: 7.6 ns  

Factory Package Quantity: 30  

Technology: SiC  

Trade name: Z-FET  

Transistor polarity: N-Channel  

Typical Off Delay Time: 10.8 ns  

Typical turn-on delay time: 5.2 ns  

Vds - drain-source breakdown voltage: 1.2 kV  

Vgs - gate-source voltage: - 10 V, + 25 V  

Vgs th - gate-source threshold voltage: 2.8 V  

Unit weight: 6 g 


Actual order can be discussed in detail, welcome to contact Mr Chen:

Tel：+86 13410018555

Email：sales@hkmjd.com

Home URL:www.hkmjd.com

C2M0280120D.jpg

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