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Mitsubishi Electric Group announced today (June 10, 2024) that from June 10, it will begin offering low-current versions of 3.3kV/400A and 3.3kV/200A Schottky Barrier Diode (SBD) embedded SiC-MOSFET modules for large industrial equipment, including railways and power systems. Together with the existing 3.3kV/800A modules, the newly named Unifull™ family contains three products to meet the growing demand for inverters that can improve power output and power conversion efficiency in large industrial equipment. The product is on display at PCIM Europe 2024 (June 11-13, Nuremberg, Germany).

In order to achieve a decarbonized society, there is a growing demand for power semiconductors capable of efficient power conversion, especially SiC power semiconductors that can significantly reduce power losses. Power semiconductor modules are commonly used in large industrial equipment to achieve power conversion, such as traction drive systems and power supplies, DC transmission, etc. Demand is particularly strong for high-power, high-efficiency SiC modules that can further improve power conversion efficiency and support inverter designs with different output capacities.

Mitsubishi Electric announced on March 29, 2024, a 3.3kV/800A SBD embedded SIC-MOSFET module featuring an optimized package structure that reduces switching losses and improves SiC performance. The Unifull™ module significantly reduces switching losses compared to existing power modules and helps to increase the power output and efficiency of large industrial equipment, making it suitable for auxiliary power supply of rail vehicles and drive systems with relatively small capacity.

Product characteristics

• Suitable for low current modules with different output capacities

Mitsubishi Electric's SBD embedded SiC-MOSFET module adds two new 3.3kV/400A and 3.3kV/200A low-current versions, joining the existing 3.3kV/800A to form the new Unifull™ family.

The new low current module is suitable for auxiliary power supply of railway vehicles and relatively small capacity drive system, suitable for large industrial equipment with different power requirements, and improves its inverter power conversion efficiency, expanding the application range.

• SIC-MOSFETs with built-in SBD help achieve high output, efficiency and reliability of inverters

The SBD embedded SIC-MOSFETs in an optimized package structure reduce switching losses by approximately 54% compared to Mitsubishi Electric's existing all-sic power modules * and 91% compared to the company's existing Si power modules **, helping to improve power output and efficiency.

The use of bipolar mode activation (BMA) cell structure improves the inrush current resistance and helps to improve the reliability of the inverter.

About Mitsubishi Electric

Founded in 1921, Mitsubishi Electric is a world-renowned conglomerate. As a technology-leading enterprise, Mitsubishi Electric has a number of patented technologies, and with strong technical strength and good corporate reputation in the global power equipment, communication equipment, industrial automation, electronic components, home appliances and other markets occupy an important position.

Article source: Electronic innovative Components network

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