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Shenzhen Mingjiada Electronics Co., Ltd.
Model

VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator High Speed Comparator Interface - Multi-Rate Retimer

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

Filter

SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

Magnetic Connectors Ethernet Connectors Modular Connectors QSFP DD Connectors DIMM Connectors Cable assembly Module Connectors Pluggable Connectors Power Connectors AI Connectors USB Connector Circular Connector Automotive Connector Card Edge Connectors Board-To-Board & Mezzanine Connectors FFC, FPC ( Flat Flexible ) Connectors Backplane Connectors Rectangular Connectors RF Connectors Rectangular Connectors - Arrays, Edge Type, Mezzanine (Board to Board)

Sensor

Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope Ultrasonic receiver, transmitter (distance measurement)

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

AI Accelerators

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Renesas Electronics Launches Next-Generation Si-IGBT for Electric Vehicle Inverters

Renesas Electronics Launches Next-Generation Si-IGBT for Electric Vehicle Inverters

Source:our siteTime:2022-09-01Views:

Renesas Electronics announced the launch of a new generation of Si-IGBT (Silicon-Based Insulated Gate Bipolar Transistor) devices, which can bring lower power losses in a smaller size and will be used in electric vehicle inverters.

On September 1, Renesas Electronics announced the launch of a new generation of Si-IGBT (Silicon-Based Insulated Gate Bipolar Transistor) devices, which can bring lower power losses in a smaller size and will be applied in electric vehicle inverters. For the inverter, the product will start mass production on the 200mm and 300mm wafer lines at Renesas' Naka factory in Japan in the first half of 2023. It is Renesas' first mass-produced IGBT product using 300mm wafers.

QQ图片20220901155548.png

In addition, Renesas will ramp up production of the product at its new power semiconductor device 300mm fab in Kofu, Japan, starting in the first half of 2024, to meet the growing market demand for power semiconductor products.


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