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RENESAS TP65H150BG4JSG is a 650V 150mΩ SuperGaN FET in PQFN56 package

RENESAS TP65H150BG4JSG is a 650V 150mΩ SuperGaN FET in PQFN56 package

Source:our siteTime:2025-08-29Views:

TP65H150BG4JSG is a 650V, 150mΩ gallium nitride (GaN) field-effect transistor (FET) designed based on Renesas Gen IV platform and is a normally closed device. Its core adopts a combined technology of high-voltage GaN HEMT and low-voltage silicon MOSF…

TP65H150BG4JSG is a 650V, 150mΩ gallium nitride (GaN) field-effect transistor (FET) designed based on Renesas' Gen IV platform and is a normally closed device. Its core adopts a combined technology of high-voltage GaN HEMT and low-voltage silicon MOSFET, significantly enhancing efficiency and reliability.


Core parameters

FET type: N-channel

Technology: GaNFET (Gallium nitride

Drain-source voltage (Vdss) : 650 V

Current at 25°C - continuous drain (Id) : 16A (Tc)

Drive voltage (maximum Rds On, minimum Rds On) : 6V

On-resistance (maximum value) at different ids and Vgs: 180 milliohms @ 10A, 6V

Vgs(th) (maximum value) at different ids: 2.8V @ 500µA

Gate charge (Qg) at different Vgs (maximum value) : 4.9nC @ 10 V

Vgs (maximum value) : ±10V

Input capacitance (Ciss) at different Vds (maximum value) : 400 pF @ 400 V

FET function: -

Power dissipation (maximum) : 83W (Tc)

Operating temperature: -55°C to 150°C (TJ)

Installation type: Surface mount type

Package: 8-PQFN (5x6)

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For details

The TP65H150BG4JSG 650V 150mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas' Gen IV platform. It combines the most advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, providing outstanding reliability and performance.


Renesas GaN offers higher efficiency than silicon through lower gate charge, lower crossing loss and smaller reverse recovery charge.


The TP65H150BG4JSG adopts the industry-standard PQFN56 package and features a universal source package configuration.


Key features

GaN technology in compliance with JEDEC standards

Dynamic RDS (on) eff has undergone production testing

Robust design, definition

Inherent life test

Wide gate safety margin

Transient overvoltage capability

A very low QRR

Reduce frequency division loss

Compliant with RoHS standards and halogen-free packaging

Supports AC-DC and DC-DC designs

Increase power density

Reduce the size and weight of the system

Reduce the overall system cost

Achieve higher efficiency in both hard-switching and soft-switching circuits

It is easy to drive with a common gate driver


Application scenarios

The field of consumption

Power adapter

Low-power SMPS

Lighting system


Immediate contact: Welcome to visit the official website of mingjiada (www.hkmjd.com) to check the stock of TP65H150BG4JSG, or call +86 13410018555 (Mr. Chen) for product purchase quotation.


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