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TP65H150BG4JSG is a 650V, 150mΩ gallium nitride (GaN) field-effect transistor (FET) designed based on Renesas Gen IV platform and is a normally closed device. Its core adopts a combined technology of high-voltage GaN HEMT and low-voltage silicon MOSF…
TP65H150BG4JSG is a 650V, 150mΩ gallium nitride (GaN) field-effect transistor (FET) designed based on Renesas' Gen IV platform and is a normally closed device. Its core adopts a combined technology of high-voltage GaN HEMT and low-voltage silicon MOSFET, significantly enhancing efficiency and reliability.
Core parameters
FET type: N-channel
Technology: GaNFET (Gallium nitride
Drain-source voltage (Vdss) : 650 V
Current at 25°C - continuous drain (Id) : 16A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 6V
On-resistance (maximum value) at different ids and Vgs: 180 milliohms @ 10A, 6V
Vgs(th) (maximum value) at different ids: 2.8V @ 500µA
Gate charge (Qg) at different Vgs (maximum value) : 4.9nC @ 10 V
Vgs (maximum value) : ±10V
Input capacitance (Ciss) at different Vds (maximum value) : 400 pF @ 400 V
FET function: -
Power dissipation (maximum) : 83W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Surface mount type
Package: 8-PQFN (5x6)
For details
The TP65H150BG4JSG 650V 150mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas' Gen IV platform. It combines the most advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, providing outstanding reliability and performance.
Renesas GaN offers higher efficiency than silicon through lower gate charge, lower crossing loss and smaller reverse recovery charge.
The TP65H150BG4JSG adopts the industry-standard PQFN56 package and features a universal source package configuration.
Key features
GaN technology in compliance with JEDEC standards
Dynamic RDS (on) eff has undergone production testing
Robust design, definition
Inherent life test
Wide gate safety margin
Transient overvoltage capability
A very low QRR
Reduce frequency division loss
Compliant with RoHS standards and halogen-free packaging
Supports AC-DC and DC-DC designs
Increase power density
Reduce the size and weight of the system
Reduce the overall system cost
Achieve higher efficiency in both hard-switching and soft-switching circuits
It is easy to drive with a common gate driver
Application scenarios
The field of consumption
Power adapter
Low-power SMPS
Lighting system
Immediate contact: Welcome to visit the official website of mingjiada (www.hkmjd.com) to check the stock of TP65H150BG4JSG, or call +86 13410018555 (Mr. Chen) for product purchase quotation.
Time:2025-08-29
Time:2025-08-29
Time:2025-08-29
Time:2025-08-29
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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