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Shenzhen Mingjiada Electronics Co., Ltd.
Model

VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet Instrumentation Amplifiers PCI Express Switches Automotive System-on-Chip Security and Certification IC Equalizer/Driver/Repeater PCI Interface IC PCIe switch Interface-Multiprotocol Transceiver Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

Filter

Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors Wire to Board Connectors

Sensor

Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

AI Accelerators

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Toshiba launches third-generation SiC MOSFETs for more efficient industrial equipment

Toshiba launches third-generation SiC MOSFETs for more efficient industrial equipment

Source:our siteTime:2022-08-31Views:

On August 31, Toshiba Electronic Components and Storage Corporation ("Toshiba") announced today that it has launched a new power device, the third-generation silicon carbide (SiC) MOSFET "TWxxNxxxC series". This series features low…

On August 31, Toshiba Electronic Components and Storage Corporation ("Toshiba") announced today that it has launched a new power device, the third-generation silicon carbide (SiC) MOSFET "TWxxNxxxC series". This series features low on-resistance, which significantly reduces switching losses. The 10 products in this series, including 5 1200V products and 5 650V products, have started shipping today.

QQ图片20220831160506.png

The on-resistance per unit area (RDS(ON)A) of the new product has decreased by about 43%, resulting in a reduction of about 80% in the "drain-source on-resistance gate-drain charge (RDS(ON)Qgd)", which is reflected in the conduction. An important indicator of the relationship between pass loss and switching loss. This reduces switching losses by approximately 20%, while reducing on-resistance and switching losses. Therefore, the new product helps to increase the efficiency of the equipment.


Toshiba said that in the future, the IDM model of "epitaxial equipment + epitaxial wafer + device" will help them seize the railway, offshore wind power generation, data center and vehicle-mounted markets.

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Contact Number:86-755-83294757

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