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On 12 August, Wolfspeed launched its fourth-generation (Gen 4) 1200 V automotive-grade silicon carbide (SiC) bare die MOSFET series, specifically designed for harsh automotive environments. Wolfspeed's fourth-generation high-performance SiC MOSFETs can operate continuously at 185°C, enabling powertrain systems to achieve maximum performance.

The series features a bare die design without packaging, enabling flexible integration into various customised modules. With its exceptional characteristics, including high blocking voltage, low on-resistance, high-speed switching, and low capacitance, this device serves as an ideal solution for automotive powertrain systems and motor drive applications.

1. Technical Highlights and Performance Improvements

Conduction and Switching Loss Optimisation: Gen4 MOSFETs significantly improve efficiency by reducing conduction resistance (RDS(on)) and switching losses at high temperatures. For example, high-temperature-specific conduction resistance is reduced by 21%, and switching losses (EON/EOFF) are reduced by 15%, making them suitable for applications with wide load ranges (such as electric vehicle inverters and industrial motor drives).

Improved Body Diode:  

The reverse recovery performance of the body diode has been improved by 3.5 times, reducing electromagnetic interference (EMI) and ringing during switching processes, simplifying filter design, and supporting higher switching frequencies.

Enhanced reliability:  

Short-circuit withstand capability: Supports 2 microseconds of short-circuit withstand time, ensuring fault safety.  

Resistance to cosmic ray interference: Through design optimisation, cosmic ray failure rate is reduced by 100 times, suitable for high-altitude applications (e.g., electric vehicles, avionics).  

High-temperature operation: Can operate continuously at 185°C and supports 200°C under limited conditions.

2. Application Scenarios and System Advantages

Automotive Sector: 1200V automotive-grade bare die MOSFETs are specifically designed for powertrains, extending range by reducing losses, minimizing heat dissipation requirements, and supporting high power density integration.

Industrial and Energy: Industrial motor drives: High-frequency switching characteristics reduce the size of magnetic components, lowering costs.

Renewable energy systems: Improve conversion efficiency and reduce maintenance requirements.

Emerging Applications: Such as eVTOL (electric vertical take-off and landing aircraft) and avionics, which rely on its high power density and reliability.

3. Packaging and Compatibility

Flexible Packaging Design: Bare die form supports custom module integration, advanced packaging technology reduces parasitic inductance, and optimises thermal management (e.g., press-fit pin design).

Plug-and-play upgrades: Compatible with existing gate drive technologies, simplifying the transition from third-generation to fourth-generation.

4. Capacity and Manufacturing

Wolfspeed produces Gen4 chips using 200mm wafer technology, leveraging the world's largest silicon carbide manufacturing facility, with plans to expand capacity by 30 times, further solidifying its market leadership position.

Summary

Wolfspeed Gen4 SiC MOSFETs redefine the benchmark for high-power applications through multi-dimensional performance optimisation (efficiency, reliability, usability), particularly suited for scenarios with stringent requirements for energy efficiency and durability. Technical details and test data (such as waveform comparisons and loss reduction) can be referenced in the official white paper.