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infineon Technologies AG, a global leader in semiconductors for power systems and the Internet of Things, has recently launched the CoolSiC™ MOSFET 1200 V G2 in a top heat dissipation (TSC) Q-DPAK package. This new type of semiconductor device can offer superior thermal performance, system efficiency and power density, and is specifically designed to meet the high performance and high reliability requirements of industrial applications, such as electric vehicle chargers, photovoltaic inverters, uninterruptible power supplies, motor drives and solid-state circuit breakers, etc.

The technology adopted by this CoolSiC 1200 V G2 has a significant improvement compared to the previous generation product. Under the same on-resistance (Rds(on)), the switching loss can be reduced by up to 25% and the system efficiency can be increased by 0.1%. Based on infineon's advanced. The XT diffusion soldering technology has reduced the thermal resistance of the G2 series products by more than 15% compared to the G1 series, and the MOSFET temperature has also decreased by 11%. With an outstanding on-resistance ranging from 4 mΩ to 78 mΩ and a rich product portfolio, designers can use it flexibly to enhance system performance and meet the requirements of target applications. In addition, the new technology supports overload operation at a junction temperature of up to 200°C (Tvj) and has excellent anti-parasitic conduction capability, ensuring reliable operation under dynamic and harsh working conditions.

infineon CoolSiC MOSFET 1200 V G2 is available in both single-switch and dual-half-bridge Q-DPAK packages. Both models belong to infineon's broader X-DPAK top cooling platform. All top heat sink (TSC) versions (including Q-DPAK and TOLT) have a uniform package thickness of 2.3mm, offering high design flexibility that enables customers to flexibly expand and combine different products under a single heat sink assembly. This design flexibility simplifies the development of advanced power systems, facilitating customers to customize and expand their solutions according to their needs.

The Q-DPAK package significantly enhances heat dissipation performance by enabling direct heat conduction between the top of the device and the heat sink. Compared with the traditional bottom heat dissipation packaging, this direct heat conduction path can significantly improve the heat conduction efficiency and make the system design more compact. In addition, the layout design of the Q-DPAK package significantly reduces parasitic inductance, which is crucial for enhancing switching speed, helping to improve system efficiency, and lowering the risk of voltage oversurge. . This package, due to its small space occupation, is suitable for compact system designs. Its compatibility with automated assembly processes simplifies the manufacturing process, ensuring cost-effectiveness and scalability.

Supply situation

The CoolSiC™ MOSFET 1200 V G2 with Q-DPAK single switch and double half-bridge package is now available. For more information, please visit: https://www.infineon.cn/products/power/mosfet/silicon-carbide/discretes.

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