sales@hkmjd.com
Service Telephone:86-755-83294757
One-stop (Renesas) GaN Power Device Supply Platform — — Shenzhen Mingjiada Electronic
Amid the explosive growth of fast charging technology, 5G base stations and new energy vehicles, gallium nitride (GaN) power devices, with their ultra-high frequency switching and zero reverse recovery characteristics, are reshaping the performance bo…
Amid the explosive growth of fast charging technology, 5G base stations and new energy vehicles, gallium nitride (GaN) power devices, with their ultra-high frequency switching and zero reverse recovery characteristics, are reshaping the performance boundaries of power electronics with overwhelming force. As a global leader in GaN technology, Renesas' EcoGaN™ series of power devices achieve a breakthrough of 99% energy efficiency and kilowatt-level power density through a unique d-mode and cascode architecture. Shenzhen Mingjiada Electronics Co., LTD., relying on the original factory direct supply channel of Renesas, has built a one-stop supply platform covering the entire range of EcoGaN™ products - with a dynamic inventory of tens of millions, original factory-level technology empowerment and 48-hour global delivery, it helps customers seize the high ground of efficiency in the fields of fast charging, automotive power supplies and data centers.
I. EcoGaN™ : Redefining the Physical Limits of Power Semiconductors
Renesas has broken through the performance constraints of traditional silicon-based devices and built its core competitiveness through three major technological innovations
1. Vertical integration design: A performance leap from wafers to packaging
d-mode HEMT + Si MOS Cascode structure: Eliminates the complexity of traditional GaN drivers (such as GS66408T), supports direct control by standard MOSFET drivers, and shortens the system development cycle by 60%.
Ultra-low dynamic resistance: The Rds(on) * Qg coefficient of advantage is as low as 50 mΩ·nC (such as ISL70021SEH), and the switching loss is 70% lower than that of silicon-based MOSFETs, suitable for 2MHz ultra-high frequency LLC resonant topologies.
Copper column flip-chip package: Thermal resistance as low as 0.3℃/W (such as NPIV1040G), supports continuous operation at a junction temperature of 150℃, and power density exceeds 100 W/in³.
2. Automotive-grade reliability: The core engine of the electrification process
AEC-Q101 certification: Passed the 1,500-hour high-temperature and high-humidity reverse deviation test (such as GS61008P), withstanding extreme temperature cycles ranging from -55 ° C to 175 ° C;
Short-circuit resistance: Can withstand 10μ s-level direct current impact (such as NPIV2020G), providing "zero explosion" guarantee for 800V platform OBC (on-board charger).
EMC optimization design: Integrated Kelvin source and gate electric field shielding, with a 50% peak voltage drop of switching oscillation voltage (e.g. GS61004T).
3. Intelligent ecological protection: Building a system-level security moat
Adaptive gate drive: In conjunction with the ISL81807 driver IC, it achieves NS-level overcurrent turn-off and negative voltage turn-off (-3V), eliminating the risk of parasitic conduction of SiC MOSFETs.
Real-time temperature feedback: Built-in NTC thermistor (such as GS66516T), supporting dynamic derating control to prevent thermal runaway.
Mingjiada's key supply model matrix
650V industrial flagship: GS61008P (TOLL package), GS66508T (PQFN 5×6), compatible with 3kW server power supply;
Automotive-grade dedicated components: NPIV1040G (AEC-Q101), supporting bidirectional energy conversion on 400V-800V battery platforms;
Ultra-high frequency consumer-grade solution: ISL70021SEH (WLBGA), empowering 140W PD3.1 fast charging module.
Ii. Mingjiada Supply System: Closed-loop Guarantee from Scarce Materials to Mass production Escort
1. Direct supply from the original factory
Genuine product guarantee: All EcoGaN™ devices come with original factory anti-counterfeiting codes and batch traceability documents, and support X-ray wafer verification.
2. A spot pool of over 100 million
The largest dynamic inventory in Asia-Pacific: Shenzhen bonded Warehouse always keeps over 500,000 GaN pieces of scarce models (such as GS61004T) in stock. Urgent orders are supported for 24-hour direct air delivery to the world, with a shortage rate of less than 0.1%.
3. Agile Delivery and Cost Optimization
Price competitiveness: Relying on the strategic cooperation with Renesas, the purchase price for medium and small batches is 8%-15% lower than the market price, and it supports a minimum order of 10 pieces for engineering samples.
VMI inventory management: On-demand material allocation reduces customer capital occupation, and slow-moving inventory can be purchased at a high price in reverse.
Conclusion: Reconstructing the power electronics gene chain with GaN technology
With the accelerated implementation of the global "dual carbon" strategy, EcoGaN™ has become the ultimate solution for kilowatt-level power conversion scenarios, thanks to its physical limit performance, automotive-grade reliability and system-level intelligence. Mingjiada Electronics provides Chinese enterprises with a GaN empowerment closed loop from sample to mass production by integrating Renesas' original factory resources, dynamic inventory of hundreds of millions, and cross-domain technical solutions. Whether dealing with shortage crises, cost pressures or technological upgrade challenges, this place will always be your reliable supply hub for third-generation semiconductors.
Get the GaN exclusive supply solution
Sales Hotline: +86 13410018555 (Mr. Chen)
Contact email: sales@hkmjd.com
Spot check entry: www.hkmjd.com
Time:2025-08-05
Time:2025-08-05
Time:2025-08-05
Time:2025-08-05
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: