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Vishay has launched a brand-new third-generation small-sized 650V and 1200V SiC Schottky diode

Vishay has launched a brand-new third-generation small-sized 650V and 1200V SiC Schottky diode

Source:our siteTime:2025-08-01Views:

Recently, Vishay Intertechnology, Inc. "Announcement Three brand-new third-generation 650V and 1200V silicon carbide (SiC) Schottky diodes in ultra-small size SlimSMA HV (DO-221AC) packages are launched - VS-3C02EJ07-M3 for 2A and VS-3C01EJ12-M3 …

Recently, Vishay Intertechnology, Inc. "Announcement Three brand-new third-generation 650V and 1200V silicon carbide (SiC) Schottky diodes in ultra-small size SlimSMA HV (DO-221AC) packages are launched - VS-3C02EJ07-M3 for 2A and VS-3C01EJ12-M3 for 1A, as well as 2 A's VS-3C02EJ12-M3. These devices adopt a combined PIN Schottky (MPS) design, with a minimum creepage distance of 3.2mm. They integrate the advantages of low capacitance charge and temperature-constant switching characteristics, which can improve the efficiency of high-speed hard-switching power supply design.

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For high-voltage applications, Vishay recently released a device with a high creepage distance that enhances electrical insulation performance. Its SlimSMA HV package uses a molded CTI ³ 600 compound to ensure excellent electrical insulation. For space-constrained designs, the thickness of these diodes is only 0.95mm, while the thickness of SMA and SMB package competitors with similar package sizes is 2.3mm.


Unlike silicon diodes, VS-3C01EJ12-M3, VS-3C02EJ07-M3 and VS-3C02EJ12-M3 can maintain a low capacitive charge as low as 7.2 nC at any temperature, thereby accelerating the switching speed, reducing power loss and improving the efficiency of high-frequency applications. Furthermore, these devices have almost no recovery tail current, thereby further enhancing efficiency, and their MPS structure can reduce the forward voltage drop to 1.30V.


The operating temperatures of VS-3C01EJ12-M3, VS-3C02EJ07-M3 and VS-3C02EJ12-M3 can reach up to +175 ° C. Their typical applications include bootloader diodes, anti-parallel diodes and PFC diodes used in DC/DC and AC/DC converters in server power supplies. Power generation and storage systems; Industrial drives and tools; And an X-ray generator. These devices have a positive temperature coefficient, facilitating parallel connection in these applications.


These diodes comply with the RoHS standard, are halogen-free, have a humidity sensitivity grade of 1, conform to the J-STD-020 standard, and meet the JESD 201 Type II whisker test requirements.


Supply information

The new SiC diode is now available for sample and has achieved mass production, with a supply cycle of 14 weeks.


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