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ADI HMC383LC4TR General Purpose GaAs PHEMT MMIC Medium Power Amplifier

ADI HMC383LC4TR General Purpose GaAs PHEMT MMIC Medium Power Amplifier

Source:our siteTime:2025-07-10Views:

ADI HMC383LC4TR General Purpose GaAs PHEMT MMIC Medium Power AmplifierShenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, has been consistently supplying ADIs high-performance HMC383LC4TR general-purp…

ADI HMC383LC4TR General Purpose GaAs PHEMT MMIC Medium Power Amplifier


Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, has been consistently supplying ADI's high-performance HMC383LC4TR general-purpose gallium arsenide PHEMT MMIC medium-power amplifier.


Product Overview of HMC383LC4TR:

The HMC383LC4TR is a high-performance general-purpose gallium arsenide PHEMT MMIC medium-power amplifier manufactured using advanced semiconductor processes, specifically designed for high-frequency applications from 12 GHz to 30 GHz. The HMC383LC4TR device is widely used in wireless communication, radar systems, test and measurement, and other fields due to its excellent RF performance and stable operating characteristics.


The HMC383LC4TR provides 15 dB gain and +18 dBm saturated power under a single +5V power supply. Gain and output power remain consistent across the entire operating frequency band, enabling the use of a universal driver/local oscillator amplifier solution across multiple radio frequency bands. The RF input/output ports are DC-blocked and matched to 50 ohms for ease of use.


The HMC383LC4TR amplifier is housed in a RoHS-compliant lead-free 24-pin QFN package (4mm × 4mm), making it ideal for surface mount technology (SMT) manufacturing processes and easy to integrate into various high-frequency PCB designs. The HMC383LC4TR's compact package not only saves valuable PCB space but also provides excellent thermal conductivity, ensuring device stability under high-power operating conditions.


HMC383LC4TR Specifications

Product Category: RF Amplifier

Operating Frequency: 12 GHz to 30 GHz

Operating Supply Voltage: 5 V

Operating Supply Current: 100 mA

Gain: 15 dB

Noise Figure (NF): 7.5 dB

Type: General-Purpose Amplifier

Mounting Method: SMD/SMT

Package/Housing: QFN-24

Technology: Gallium Arsenide

P1dB - Compression Point: 16 dBm

OIP3 - Third-Order Intercept Point:    25 dBm

Minimum Operating Temperature:    -40 °C

Maximum Operating Temperature:    +85 °C

Input Return Loss:    11 dB

Number of Channels:    1 Channel

Pd - Power Dissipation:    920 mW


Core Technical Advantages of the HMC383LC4TR:

Wideband operating characteristics: Covers an ultra-wide frequency range from 12 GHz to 30 GHz, enabling the HMC383LC4TR to accommodate various wireless communication frequency band requirements, including Ku-band and K-band.


High gain performance: The HMC383LC4TR provides a typical gain value of 15 dB, maintaining consistent gain flatness across the entire operating frequency band, effectively enhancing the overall performance of the signal chain.


Excellent power output: The saturated output power reaches +18dBm, with an output third-order intercept point (OIP3) of +25dBm and a P1dB compression point of 16.5dBm, enabling it to drive subsequent mixers or other high-power devices.


Single-supply convenience: The HMC383LC4TR requires only a +5V single supply (operating current 100mA), simplifying system power design and reducing overall power consumption.


Optimised impedance matching: The RF input and output ports incorporate a 50Ω matching network internally and feature a DC-blocking design, enabling direct integration into standard RF systems and reducing the need for external matching components.


Application areas of the HMC383LC4TR:

The HMC383LC4TR, with its excellent RF performance and wide bandwidth characteristics, has found widespread application in multiple high-tech fields, providing reliable signal amplification solutions for various wireless systems.


Point-to-Point and Point-to-Multipoint Wireless Communication Systems

In modern microwave communication applications, the HMC383LC4TR is an ideal choice for building point-to-point (P2P) and point-to-multipoint (P2MP) radio systems. Its wide bandwidth characteristics allow system designers to use a single amplifier design to cover multiple frequency bands, reducing bill of materials (BOM) complexity and production costs. In VSAT (Very Small Aperture Terminal) systems, this amplifier provides stable signal gain, ensuring the reliability of satellite communication links.


Test and Measurement Equipment and Sensor Systems

In high-end test and measurement equipment, the HMC383LC4TR serves as a driver amplifier, providing pure and stable amplified signals for instruments such as signal generators and spectrum analysers. Its excellent linearity and power output characteristics make it particularly suitable for sensor systems and radar test equipment, where signal integrity is critical.


Local Oscillator (LO) Drive Applications

As a mixer LO driver, the HMC383LC4TR performs exceptionally well. It provides sufficient drive power for HMC series mixers while maintaining excellent spectral purity. This feature makes it highly valuable in frequency conversion systems, especially in applications requiring high dynamic range.


Military and Aerospace Systems

In military and aerospace applications, electronic equipment must operate reliably under extreme environmental conditions. The HMC383LC4TR's robust design and stable performance parameters enable it to withstand these demanding environments. From electronic warfare systems to satellite communication terminals, this amplifier delivers the required RF performance.


5G and Millimeter-Wave Communications

As 5G communications expand into higher frequency bands, millimeter-wave technology is becoming increasingly important. The HMC383LC4TR's coverage of the 12-30GHz frequency band includes part of the 5G millimeter-wave frequency band, making it a potential candidate for applications such as 5G base stations and backhaul links. Its high gain and excellent power characteristics help compensate for the high path loss in the millimeter-wave frequency band.


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