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ADI HMC431LP4ETR GaAs InGaP HPT MMIC Voltage Controlled Oscillators With Buffer Amplifier
ADI HMC431LP4ETR GaAs InGaP HPT MMIC Voltage Controlled Oscillators With Buffer AmplifierShenzhen Mingjiada Electronics Co., Ltd., as a leading global distributor of electronic components, specialises in supplying ADIs high-performance RF products, in…
ADI HMC431LP4ETR GaAs InGaP HPT MMIC Voltage Controlled Oscillators With Buffer Amplifier
Shenzhen Mingjiada Electronics Co., Ltd., as a leading global distributor of electronic components, specialises in supplying ADI's high-performance RF products, including the HMC431LP4ETR—a monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) based on GaAs/InGaP heterojunction bipolar transistor (HBT) technology. The HMC431LP4ETR integrates a resonator, negative resistance device, varactor diode, and buffer amplifier, specifically designed for high-frequency applications in the 5.5-6.1 GHz band, and is widely used in wireless communication, satellite communication, and military electronics fields.
HMC431LP4ETR Product Overview
The HMC431LP4ETR is a high-performance voltage-controlled oscillator manufactured using advanced GaAs InGaP HBT (heterojunction bipolar transistor) MMIC technology. The HMC431LP4ETR integrates a resonator, negative resistance device, varactor diode, and buffer amplifier into a single-chip structure, offering excellent phase noise performance and temperature stability.
In RF and microwave applications, VCOs (voltage-controlled oscillators) are critical components for frequency synthesis, modulation/demodulation, and signal generation. The HMC431LP4ETR, with its exceptional performance parameters and compact packaging, is an ideal choice for C-band (5.5–6.1 GHz) applications.
Technical Specifications of the HMC431LP4ETR
As a high-performance VCO oscillator, the HMC431LP4ETR integrates multiple advanced technologies and innovative designs, enabling it to deliver exceptional RF performance within the 5.5–6.1 GHz frequency band. The HMC431LP4ETR is manufactured using gallium arsenide/indium gallium phosphide (GaAs InGaP) heterojunction bipolar transistor (HBT) technology. This material combination offers high electron mobility, excellent breakdown voltage, and good thermal stability, making it highly suitable for high-frequency, high-power applications.
Core performance parameters of the HMC431LP4ETR
Frequency range: 5.5 GHz to 6.1 GHz, covering the primary frequency bands for C-band communication applications
Output power: Typical value of +2 dBm, providing sufficient signal strength to drive subsequent circuits
Phase noise: -102 dBc/Hz at a 100 kHz offset, ensuring signal purity and system signal-to-noise ratio
Supply Voltage: Single-supply operation, operating range 2.75V to 3.25V, typical value 3V
Operating Current: Typical value 27mA (maximum 34mA), excellent power consumption performance
Tuning Voltage Range: 0VDC to 10VDC, providing a wide range of frequency control capability
Modulation Sensitivity: 12MHz/V, enabling precise frequency adjustment
Package and structural features
The HMC431LP4ETR uses a QFN-24 package (specifically a 24-VFQFN Exposed Pad), with dimensions of just 4x4 millimetres, making it a leadless surface-mount package. This package offers the following advantages:
Compact design: The compact size of 16mm² (4.1mm x 4.1mm x 1.0mm) saves PCB space and is suitable for high-density integration
Excellent thermal performance: The exposed pad design enhances heat conduction and improves device reliability
Cost-effective solution: Compared to traditional metal-packaged VCOs, the QFN package significantly reduces system costs
Suitable for automated production: Surface Mount Technology (SMT) compatibility facilitates large-scale manufacturing
The monolithic structure (MMIC) of the HMC431LP4ETR is another key technical highlight. Unlike traditional VCOs composed of discrete components, the HMC431LP4ETR integrates all critical functional modules—including resonators, negative resistance devices, varactor diodes, and buffer amplifiers—onto a single chip. This design offers multiple advantages:
Enhanced reliability: Reduced external connections and component count lower failure rates
Improved stability: Consistent performance under temperature variations (-40°C to +85°C), mechanical shock, and vibration conditions
Simplified design: No external resonator required, reducing peripheral circuit complexity
Optimised performance: On-chip integration minimises parasitic effects, improving critical parameters such as phase noise
Typical application areas for the HMC431LP4ETR
The HMC431LP4ETR, with its exceptional high-frequency performance and stable output characteristics, has found widespread application in multiple high-tech fields. As a voltage-controlled oscillator specifically designed for the C-band (5.5–6.1 GHz), it plays a critical role in modern wireless communications, satellite systems, and professional RF equipment.
Wireless Local Area Network (WLAN) Applications
The HMC431LP4ETR is an ideal choice for 5 GHz band WLAN systems such as 802.11a and HiperLAN. In these applications, the VCO serves as a core component of the RF front end, and its performance directly impacts the communication quality and stability of the entire system:
Access point devices: Provide stable local oscillator signals for base stations to ensure reliable data transmission
Client devices: Enable high-frequency signal generation in mobile terminals such as laptops and tablets
Mesh network nodes: Support high-frequency Wi-Fi mesh network deployment to expand coverage
High-performance routers: Meet the stringent requirements for signal purity in high-speed protocols such as 802.11ac/ax
The VCO's -102 dBc/Hz phase noise characteristic is particularly advantageous in high-density deployment scenarios, reducing adjacent channel interference and increasing network capacity.
Satellite communication and VSAT systems
The HMC431LP4ETR performs exceptionally well in VSAT (Very Small Aperture Terminal) radio equipment. Satellite communication systems have extremely high requirements for frequency source stability and phase noise, and this VCO fully meets these stringent conditions:
Remote ground stations: Provides stable local oscillation signals for satellite uplink/downlink links
Maritime communication systems: Maintains reliable satellite connections on mobile platforms such as ships
Emergency communication equipment: Ensures uninterrupted critical communication during disasters
Military satellite terminals: Meets the reliability and environmental adaptability requirements of military communication equipment
The device's monolithic structure enables it to withstand temperature fluctuations, mechanical shocks, and vibrations common in satellite applications, ensuring long-term stable operation.
Point-to-Point Microwave Communication
The HMC431LP4ETR is suitable for the UNII (National Information Infrastructure) frequency band and point-to-point microwave radio systems. These systems are typically used for:
Urban Wireless Backbone Networks: Replacing fibre optics to rapidly deploy high-speed data links
Cellular Backhaul: Connecting base stations to the core network to support 5G network deployment
Enterprise private networks: Providing secure and reliable dedicated connections for financial institutions and large enterprises
Remote monitoring systems: Transmitting monitoring data in industrial scenarios such as oil fields and power plants
The VCO's wide tuning range (5.5–6.1 GHz) and 12 MHz/V modulation sensitivity enable it to flexibly adapt to frequency band planning and requirements in different regions.
Other Professional RF Applications
In addition to the above primary application areas, the HMC431LP4ETR can also be used in various professional RF systems:
Radar Systems: As a frequency source for short-range radar and motion detection
Test and Measurement Equipment: Providing high-purity reference signals for spectrum analysers, network analysers, etc.
Electronic Warfare Systems: Generating interference signals in military electronic countermeasure equipment
Medical RF Equipment: Used in high-end medical imaging and treatment devices
Time:2025-07-09
Time:2025-07-09
Time:2025-07-09
Time:2025-07-09
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