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Mingjiada Electronics Supplies Infineon Silicon Carbide (SiC) Device: CoolSiC™ MOSFET

Mingjiada Electronics Supplies Infineon Silicon Carbide (SiC) Device: CoolSiC™ MOSFET

Source:our siteTime:2025-07-03Views:

Shenzhen Mingjiada Electronics Co., Ltd. as a leading supplier in the electronic components industry, has been providing a full range of Infineon SiC power devices on a stock basis, offering efficient and reliable power semiconductor solutions to cust…

Shenzhen Mingjiada Electronics Co., Ltd. as a leading supplier in the electronic components industry, has been providing a full range of Infineon SiC power devices on a stock basis, offering efficient and reliable power semiconductor solutions to customers worldwide. As a leader in SiC technology, Infineon's CoolSiC™ product portfolio leads the industry in terms of efficiency, power density, and system reliability.


The following are the types of Infineon SiC devices supplied by Mingjiada Electronics:

1. CoolSiC™ MOSFET Discrete Devices  

Infineon's CoolSiC™ MOSFET discrete devices feature high efficiency and energy savings, along with optimal reliability. They are available in discrete packaging and offer products in 650V, 1200V, and 1700V voltage ratings. These devices are ideal for hard-switching and resonant-switching topologies, such as LLC and ZVS, significantly enhancing system efficiency.

400V CoolSiC™ MOSFET: Specifically designed for the AC/DC conversion stage of artificial intelligence server power supply units (PSUs) and applications such as solar and energy storage systems.

650V CoolSiC™ MOSFET: Optimised switching behaviour under high current and low capacitance conditions, suitable for various industrial applications including servers, telecommunications, motor drives, and more.

750V and 1200V CoolSiC™ MOSFETs: Suitable for industrial and automotive applications, such as onboard chargers/PFC, auxiliary inverters, and uninterruptible power supplies (UPS).

1700V CoolSiC™ MOSFET: Suitable for flyback topologies, such as energy storage systems, fast electric vehicle charging, power management (SMPS), and solar system solutions.

2000V CoolSiC™ MOSFET: Offers higher power density and voltage margin, suitable for high-voltage applications such as electric vehicle fast charging and solar system solutions.


2. CoolSiC™ MOSFET Power Modules  

Infineon's CoolSiC™ MOSFET power modules are available in various configurations, including three-level, fourpack, half-bridge, sixpack, and current extension, suitable for various high-performance applications. 


3. CoolSiC™ Schottky Diodes  

Infineon's CoolSiC™ Schottky diodes cover a voltage range from 600V and 650V to 1200V, featuring low on-resistance and fast switching characteristics, suitable for various high-frequency applications.  

600V and 650V CoolSiC™ Schottky diodes: Suitable for low-voltage, high-frequency applications.

1200V CoolSiC™ Schottky diodes: Suitable for high-voltage applications such as industrial power supplies and electric vehicle charging stations.


Supply Advantages

Mingjiada Electronics offers the following supply guarantees:

100% genuine products: All Infineon silicon carbide devices are sourced from official channels or factory inventory

Extensive inventory: Shenzhen/Hong Kong warehouses maintain stock of various series of silicon carbide devices

Flexible procurement solutions: Support for small-batch sample purchases and large-volume orders

Global logistics network: Leveraging the Shenzhen headquarters and international logistics partners to ensure rapid delivery


Contact Information

For more information on Infineon silicon carbide devices or to place an order, please contact Mingjiada Electronics:

Phone: +86 13410018555

Email: sales@hkmjd.com

Website: http://www.hkmjd.com

Address: Room 1239-1241, Xinyazhou Guoli Building, Zhenzhong Road, Futian District, Shenzhen, Guangdong Province

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