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Supply Microchip IGBT Module Series:IGBT Trench 3,IGBT Trench 4,IGBT Trench 5,IGBT Trench 7

Shenzhen Mingjiada Electronics Co., Ltd., as a leading distributor of electronic components in China, adheres to the principle of ‘serving customers and benefiting customers,’ providing high-quality and diverse electronic components to its clients.

Main products include: 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle networking ICs, automotive-grade ICs, communication ICs, artificial intelligence ICs, etc. Additionally, the company supplies memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors, and other electronic components.

Supply Advantages

1. Authenticity Guaranteed

All products are sourced from official channels, accompanied by complete quality traceability reports and original manufacturer certification, ensuring customers receive 100% authentic products.

2. Ample Inventory  

The company maintains over 2 million inventory models, ensuring sufficient stock to support customers' needs from R&D pilot production to mass production.

3. Competitive Pricing  

Leveraging the advantages of large-scale procurement, we offer prices below market rates and implement tiered pricing strategies based on purchase volume. Long-term partners can also enjoy price-locking services to effectively control procurement costs.

4. Rapid Delivery Services  

24-hour shipping: Quick processing of standard orders  

4-hour emergency response: Special expedited service  

Next-day delivery coverage: Rapid delivery to key regions  

5. Flexible Procurement Models  

Small-batch procurement: Minimum order of 1 piece to meet R&D needs  

Bulk orders: Support for VMI (Vendor-Managed Inventory) and other collaborative models  

Long-term agreements: Providing stable supply guarantees

IGBT Trench 3 Module

IGBT Trench 3 Module represents the mature results of early trench gate technology.

From a technical architecture perspective, the IGBT Trench 3 Module adopts a basic trench gate design, achieving superior conduction characteristics compared to planar gate IGBTs through a vertical gate structure. Its typical parameters include: conduction voltage (Vce(sat)) ranging from 1.8 to 2.2 V, switching frequency up to 20 kHz, and a maximum operating temperature of 150°C. While these performance metrics may not stand out by today's standards, they remain fully adequate for most industrial variable-frequency applications.

IGBT Trench 4 and Trench 5 Modules

IGBT Trench 4 and Trench 5 modules represent a significant evolution of trench gate technology, offering notable improvements in performance parameters and application scope compared to the Trench 3 module.

IGBT Trench 4 module introduces Field Stop technology, an innovative structure that significantly reduces chip thickness, leading to multiple performance improvements: the on-state voltage (Vce(sat)) is reduced to the 1.5–1.8 V range, approximately 15% lower than Trench 3 products; switching frequency has been increased to 30-40kHz, expanding the possibilities for high-frequency applications; while maintaining excellent short-circuit withstand capability to ensure system reliability.

As another milestone in technological evolution, the IGBT Trench 5 module further optimises carrier control technology based on Trench 4, achieving the optimal balance between conduction loss and switching loss. Its core technical features include: adopting a fine trench structure to increase cell density; optimising buffer layer design to improve switching characteristics; and using advanced lifetime control processes to precisely regulate minority carrier concentration. These technological advancements have reduced the overall loss of the Trench 5 module by an additional 10-15% compared to the Trench 4 module, achieving efficiency of over 98%, making it an ideal choice for high-efficiency applications.

IGBT Trench 7 Module

IGBT Trench 7 module represents the current state-of-the-art in trench gate technology, integrating multiple cutting-edge design concepts and manufacturing processes.

From a technical perspective, the innovations of the IGBT Trench 7 module are primarily reflected in three aspects: first, the adoption of micro-trench design further reduces cell size, significantly increasing trench density and markedly lowering conduction resistance; Second, the introduction of advanced carrier storage layer technology optimises carrier distribution in the on-state, achieving lower conduction losses; Third, improved gate structure and passivation processes reduce switching losses by 15% compared to previous generations while enhancing high-temperature stability. These technological advancements have elevated the overall performance of the trench 7 module to new heights: on-state voltage can be as low as 1.2–1.5 V, switching frequency easily exceeds 50 kHz, and the maximum operating temperature has been increased to 175°C.