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IXYS IXFX230N20T N-Channel Enhancement Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd., as a leading supplier in the electronic components industry, provides customers with the IXYS IXFX230N20T N-channel enhancement-mode power MOSFET transistor. The IXFX230N20T, with its outstanding performance parameters and wide range of applications, has become a critical component in power management and power conversion systems.

Product Overview Of IXFX230N20T:  

The IXFX230N20T is a high-performance power MOSFET featuring an N-channel enhancement-mode structure design, optimised for high-current and high-voltage applications. This IXFX230N20T device integrates robust power handling capabilities within a TO-247-3 package, making it an ideal choice for industrial power supplies, motor drives, and energy conversion systems.

Specifications Of IXFX230N20T:  

Transistor Polarity: N-channel  

Number of Channels: 1 channel  

Vds - Drain-Source Breakdown Voltage: 200 V  

Id - Continuous Drain Current: 230 A  

Rds On - Drain-Source Resistance: 7.5 mΩ  

Vgs - Gate-Source Voltage: -20 V, +20 V

Vgs th - Gate-source threshold voltage: 3 V  

Qg - Gate charge: 358 nC  

Minimum operating temperature: -55°C  

Maximum operating temperature: +175°C  

Pd - Power dissipation: 1.67 kW  

Channel mode: Enhancement mode  

Unit weight: 6 g

Features Of IXFX230N20T:  

International standard packaging  

High current handling capability  

Fast internal diode  

Avalanche rating  

Low RDS(on)

Key Technical Highlights Of IXFX230N20T:

Ultra-high current carrying capacity: Continuous drain current (Id) up to 230A (at case temperature Tc), enabling the IXFX230N20T to meet the demands of high-power applications

Excellent on-state characteristics: Drain-source on-resistance (Rds(on)) as low as 7.5mΩ, significantly reducing on-state losses and improving system efficiency

Robust voltage specifications: Drain-source breakdown voltage (Vds) of 200V and gate-source voltage (Vgs) range of ±20V provide a wide safe operating area

Outstanding thermal performance: Power dissipation (Pd) up to 1.67kW (at Tc conditions), supporting a wide temperature range operating environment from -55°C to +175°C

The IXFX230N20T employs IXYS' proprietary HiPerFET technology platform, which optimises device structure and material properties to achieve an optimal balance between switching speed, on-resistance, and thermal stability. A gate charge (Qg) of 358nC ensures fast switching transitions, while a gate-source threshold voltage (Vgs th) of 3V provides excellent control sensitivity.

Application Of IXFX230N20T:

The IXFX230N20T power MOSFET, with its outstanding electrical characteristics, demonstrates broad application potential across multiple industrial sectors:

Industrial Power Systems:  

High-power switching power supply (SMPS) designs, particularly for server power supplies and telecommunications base station power supplies  

Inverters and rectifier modules in uninterruptible power supply (UPS) systems  

Industrial motor drive controllers supporting high-torque applications  

Power output stages for welding equipment and plasma cutters

New Energy and Energy Conversion:  

DC-AC conversion circuits in solar inverters  

Power regulation units in wind power generation systems  

Energy management modules in battery energy storage systems (BESS)  

Power conversion stages in electric vehicle charging stations

Other High-Performance Applications:  

Output stages in audio amplifiers, particularly professional-grade high-power amplifiers  

Resonant circuits in induction heating equipment  

Fast-switching applications in pulse power systems  

High-current load switches in test and measurement equipment

Design Advantages Of IXFX230N20T:

High Efficiency: Low on-resistance and optimised switching characteristics reduce energy loss, enhancing overall system efficiency

High Reliability: The TO-247-3 package offers excellent thermal performance, combined with a wide temperature operating range, ensuring stable operation in harsh environments

Design Flexibility: A wide gate drive voltage range of ±20V simplifies driver circuit design and is compatible with various controller outputs